IP Library Granted Patent US 9,493,359
Granted Patent B2
US 9,493,359 · App. 12/226,204 · Granted Nov 15, 2016

Apparatus for producing trichlorosilane

Inventors: Toshiyuki Ishii (Yokkaichi, JP); Hideo Ito (Kuwana, JP); Yuji Shimizu (Naka-gun, JP)
Assignee: MITSUBISHI MATERIALS CORPORATION
C01B33/1071B01J12/007B01J19/02B01J19/243B01J2219/00135B01J2219/00155B01J2219/0272C01B33/10757
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Quick Facts
Patent No.
US 9,493,359
App. No.
12/226,204
Granted
Nov 15, 2016
Kind
B2
Abstract

An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to an internal reaction passageway to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism that heats the interior of the reaction vessel; a gas supply section that supplies the supply gas in the reaction vessel; and a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein the reaction passageway includes: a supply side passageway which is connected to the gas supply section at a central portion of the reaction vessel and flows the supply gas toward the outside while meandering in the reaction vessel; a return passageway which is connected to a downstream end of the supply side passageway and extends to the central portion of the reaction vessel; and a discharge side passageway that is disposed so as to be connected to a downstream end of the return passageway and to adjoin the supply side passageway of the central portion of the reaction vessel, the discharge side passageway being connected to the gas discharge section.

Claims (53)

1. An apparatus for producing trichlorosilane, comprising:

a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to an internal reaction passageway to produce a reaction product gas containing trichlorosilane and hydrogen chloride;

a heating mechanism including a heater that is disposed outside the reaction vessel, encloses the reaction vessel, and heats the interior of the reaction vessel;

a gas supply section that supplies the supply gas in the reaction vessel and is formed only at a center of the reaction vessel; and

a plurality of gas discharge sections that each section separately discharges the reaction product gas from the reaction vessel to the outside and are concentrically disposed with the heater and the gas supply section,

wherein

the reaction passageway includes:

a supply side passageway that is connected to the gas supply section at a central portion of the reaction vessel and flows the supply gas toward the outside while meandering in the reaction vessel, where an outlet of the supply side passageway is at outermost and a bottom of the reaction vessel;

a return passageway that is connected to a downstream end of the supply side passageway and extends to the central portion of the reaction vessel; and

a discharge side passageway that is disposed so as to be connected to a downstream end of the return passageway and to adjoin the supply side passageway of the central portion of the reaction vessel, the discharge side passageway being connected to the plurality of gas discharge sections,

wherein the gas supply section and the plurality of gas discharge sections are connected to an inlet and the outlet of the reaction passageway, respectively, and

wherein the reaction vessel includes a plurality of reaction tubular walls that are disposed concentrically with the heater and the gas supply section and constitute a columnar space and a plurality of tubular spaces so as to form the reaction passageway.

2. The apparatus for producing trichlorosilane according to claim 1 ,

wherein the plurality of gas discharge sections are connected to a downstream end of the discharge side passageway.

3. The apparatus for producing trichlorosilane according to claim 1 , wherein a member forming the reaction vessel is formed of carbon.

4. The apparatus for producing trichlorosilane according to claim 3 , wherein a surface of the carbon is coated with silicon carbide.

5. The apparatus for producing trichlorosilane according to claim 1 , comprising:

a storage container that stores the reaction vessel and the heating mechanism, and

an argon supply mechanism that supplies argon in the storage container.

6. The apparatus for producing trichlorosilane according to claim 3 , comprising:

a storage container that stores the reaction vessel and the heating mechanism, and

an argon supply mechanism that supplies argon in the storage container.

7. The apparatus for producing trichlorosilane according to claim 4 , comprising:

a storage container that stores the reaction vessel and the heating mechanism, and

an argon supply mechanism that supplies argon in the storage container.

8. The apparatus for producing trichlorosilane according to claim 2 , wherein a member forming the reaction vessel is formed of carbon.

9. The apparatus for producing trichlorosilane according to claim 8 , wherein a surface of the carbon is coated with silicon carbide.

10. The apparatus for producing trichlorosilane according to claim 2 , comprising:

a storage container that stores the reaction vessel and the heating mechanism, and

an argon supply mechanism that supplies argon in the storage container.

11. The apparatus for producing trichlorosilane according to claim 8 , comprising:

a storage container that stores the reaction vessel and the heating mechanism, and

an argon supply mechanism that supplies argon in the storage container.

12. The apparatus for producing trichlorosilane according to claim 9 , comprising:

a storage container that stores the reaction vessel and the heating mechanism, and

an argon supply mechanism that supplies argon in the storage container.

13. The apparatus for producing trichlorosilane according to claim 1 , wherein the plurality of gas discharge sections are disposed to support the reaction vessel.

14. The apparatus for producing trichlorosilane according to claim 1 , wherein

the return passageway is a horizontal small space; and

the discharge side passageway is enclosed by the supply side passageway.

15. The apparatus for producing trichlorosilane according to claim 14 , wherein

the discharge side passageway includes tubular spaces which flow the reaction product gas up and down.

16. The apparatus for producing trichlorosilane according to claim 1 ,

wherein the supply side passageway is configured to flow the supply gas from the bottom of the reaction vessel to a top of the reaction passageway, sequentially from the central portion of the reaction vessel towards further outside in a radial direction, sequentially from the top of the reaction passageway towards the bottom of the reaction vessel, sequentially towards outside in the radial direction, sequentially towards the top of the reaction passageway, sequentially towards further outside in the radial direction, and sequentially towards the bottom of the reaction vessel, and

wherein the discharge side passageway is configured to flow the supply gas towards the top of the reaction passageway, sequentially towards the central portion of the reaction vessel, and sequentially towards the bottom of the reaction vessel.

17. The apparatus for producing trichlorosilane according to claim 1 ,

wherein the supply side passageway is disposed so that the outermost periphery of the supply side passageway is heated by the heater.

18. The apparatus for producing trichlorosilane according to claim 1 ,

wherein the discharge side passageway adjoins and is separated from the supply side passageway by the reaction tubular walls disposed innermost side of the reaction vessel.

19. The apparatus for producing trichlorosilane according to claim 1 ,

wherein the discharge side passageway adjoins and is parallel to the supply side passageway.

20. The apparatus for producing trichlorosilane according to claim 1 ,

wherein the discharge side passageway and the supply side passageway are configured so as to perform heat-exchange with each other via the reaction tubular walls disposed innermost side of the reaction vessel.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2023
From: MITSUBISHI MATERIALS CORPORATION
To: HIGH-PURITY SILICON CORPORATION
Reel/Frame 063858/0867 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 10, 2008
From: ISHII, TOSHIYUKI; ITO, HIDEO; SHIMIZU, YUJI
To: MITSUBISHI MATERIALS CORPORATION
Reel/Frame 021694/0631 →
Priority Claims (2)
JP 2006-297035 · Oct 31, 2006 · national
JP 2007-259446 · Oct 3, 2007 · national
Continuity (1)
Related Publication 20090269259A1 · Oct 29, 2009