Clean bench and method of producing raw material for single crystal silicon
A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space.
1. A clean bench comprising:
a worktable on which polycrystalline silicon is placed;
a box part which includes side plates to surround three sides except a front face of a working space above the worktable and which includes a vertically extending part, extending from the bottom to the top of the box part, and an upper extending part, extending above the working space;
a ceiling plate, which covers an upper side of the working space, with supplying holes formed in the ceiling plate of the box part, which supply air from the upper extending part onto an upper surface of the worktable;
an ionizer, which ionizes the air supplied from the supplying holes to the working space and removes static electricity on the worktable;
suction holes formed in the side plate of the box part, which suction air from the working space;
a closed loop communicative route which communicates between the suction holes and the supplying holes;
a partition dividing the vertically extending part from the upper extending part;
a blower, which sends the air to the upper extending part, is provided in the vertically extending part and is disposed to contact with the partition;
a worktable communicative route connecting a working surface of the worktable to the communicative route at a lower side surface of the worktable.
2. A clean bench consisting of:
a worktable on which polycrystalline silicon is placed;
a box part which includes side plates to surround three sides except a front face of a working space above the worktable and which includes a vertically extending part, extending from the bottom to the top of the box part, and an upper extending part, extending above the working space;
a ceiling plate, which covers an upper side of the working space, with supplying holes formed in the ceiling plate of the box part, which supply air from the upper extending part onto an upper surface of the worktable;
an ionizer, which ionizes the air supplied from the supplying holes to the working space and removes static electricity on the worktable;
suction holes formed in the side plate of the box part, which suction air from the working space;
a closed loop communicative route which communicates between the suction holes and the supplying holes;
a partition dividing the vertically extending part from the upper extending part;
a blower, which sends the air to the upper extending part, is provided in the vertically extending part and is disposed to contact with the partition; and;
a worktable communicative route connecting a working surface of the worktable to the communicative route at a lower side surface of the worktable.
3. The clean bench according to claim 1 , further comprising:
a first filter which removes particles from the air sent to the blower, wherein the first filter is provided between the suction holes and the blower, and
a second filter with a flat plate shape provided in the upper extending part and extending parallel to the ceiling plate which is parallel to the flow of air directly from the blower and partially extending under a portion of the partition.
4. The clean bench according to claim 3 , wherein the first filter removes particles having a diameter range of approximately 10 μm or greater.
5. The clean bench according to claim 3 , wherein the second filter removes particles having a diameter range of approximately 0.3 μm or greater.