Temperature control method, method of obtaining a temperature correction value, method of manufacturing a semiconductor device and substrate treatment apparatus

1. A temperature control method in which a target temperature is given in a thermal treatment furnace and plural heaters are controlled according to the target temperature, the method comprising:

determining a thermal interference matrix which shows a correlation of a power supply amount to the heaters and detection temperature of plural profile temperature sensors provided in the thermal treatment furnace;

calculating a virtual temperature on the basis of the detection temperature of the profile temperature sensors and a weighting factor calculated from the thermal interference matrix; and

controlling the heaters so that the virtual temperature is coincident with the target temperature,

wherein the weighting factor increases as a detection position of a profile temperature sensor approaches a predetermined position.

2. The temperature control method according to claim 1 , wherein the virtual temperature is an average value of the detection temperature of some profile temperature sensors selected from the plural profile temperature sensors.

3. The temperature control method according to claim 2 , wherein the virtual temperature is an average value of the detection temperature of plural profile temperature sensors facing heaters that are divided to plural zones.

4. The temperature control method according to claim 1 , wherein the virtual temperature is obtained by multiplying the detection temperature of plural profile temperature sensors and preset weighting factors and summing the thus-obtained integration values.

5. The temperature control method according to claim 4 , wherein the weighting factors are set so that a matrix calculated by multiplication with the correlation comprises a diagonal matrix.

6. The temperature control method according to claim 4 , wherein the weighting factors are freely set by a worker.

7. The temperature control method according to claim 1 , wherein the plural profile temperature sensors comprise sensors at a plurality of detection points, and a number of the plurality of detection points exceeds a division number of the heaters, and

wherein the plurality of detection points are arranged so as to cover an area where a treatment substrate is located in the thermal treatment furnace.

8. The temperature control method according to claim 1 , wherein the target temperature comprises a temperature gradient.

9. The temperature control method according to claim 1 , wherein the detection position is located within a predetermined range of distances from the predetermined position.

10. A temperature correction value obtaining method in which a target temperature is given in a thermal treatment furnace and a correction value for making the temperature in a thermal treatment area of the thermal treatment furnace coincident with the target temperature is obtained, the method comprising:

determining a thermal interference matrix which shows the correlation of a heater and plural profile temperature sensors provided in the thermal treatment furnace;

calculating a virtual temperature on the basis of the detection temperature of the profile temperature sensors and a weighting factor calculated from the thermal interference matrix concerned; and

making the virtual temperature coincident with the target temperature and obtaining as the correction value a difference between the target temperature and the detection temperature of an in-furnace temperature sensor provided out of the thermal treatment area of the thermal treatment furnace when the virtual temperature is coincident with the target temperature,

wherein the weighting factor increases as a detection position of a profile temperature sensor approaches a predetermined position.

11. A semiconductor manufacturing method in which a target temperature is given in a thermal treatment furnace and plural heaters are controlled according to the target temperature to manufacture a semiconductor device, the method comprising:

determining a thermal interference matrix which shows the correlation of a power supply amount to the heaters and detection temperature of plural profile temperature sensors provided in the thermal treatment furnace;

calculating a virtual temperature on the basis of the detection temperature of each profile temperature sensor and a weighting factor calculated from the thermal interference matrix concerned; and

controlling the heaters so that the virtual temperature is coincident with the target temperature, thereby manufacturing the semiconductor device,

wherein the weighting factor increases as a detection position of a profile temperature sensor approaches a predetermined position.

12. A substrate treatment apparatus in which a target temperature is given in a thermal treatment furnace and plural heaters are controlled according to the target temperature to treat a substrate, said substrate treatment apparatus comprising:

a controller for determining a thermal interference matrix which shows the correlation of a power supply amount to the heaters and plural profile temperature sensors provided in the thermal treatment furnace and calculating a virtual temperature on the basis of the detection temperature of the profile temperature sensors and a weighting factor calculated from the thermal interference matrix concerned; and

a power supply unit for controlling the heaters so that the virtual temperature is coincident with the target temperature,

wherein the weighting factor increases as a detection position of a profile temperature sensor approaches a predetermined position.

13. The board treatment apparatus according to claim 12 , wherein the controller executes a control algorithm in the determining of the thermal interference matrix, the control algorithm comprising a cascade control algorithm.

14. The board treatment apparatus according to claim 12 , wherein the controller comprises a calculator for calculating the virtual temperature on the basis of the detection temperature of a profile temperature provided in a thermal treatment area of the thermal treatment furnace.