Automated selection of X-ray reflectometry measurement locations
The computer-implemented method for inspection of a sample includes defining a plurality of locations on a surface of the sample, irradiating the surface at each of the locations with a beam of X-rays, and measuring an angular distribution of the X-rays that are emitted from the surface responsively to the beam, so as to produce a respective plurality of X-ray spectra. The X-ray spectra are analyzed to produce respective figures-of-merit indicative of a measurement quality of the X-ray spectra at the respective location. One or more locations are selected out of the plurality of locations responsively to the figures-of-merit, and a property of the sample is estimated using the X-ray spectra measured at the selected location.
1. A computer-implemented method for inspection of a sample, comprising:
defining a plurality of locations on a surface of the sample;
irradiating the surface at each of the locations with a beam of X-rays and measuring an angular distribution of the X-rays that are emitted from the surface responsively to the beam, so as to produce a respective plurality of X-ray spectra;
analyzing the X-ray spectra to produce respective figures-of-merit indicative of a measurement quality of the X-ray spectra at the respective locations;
selecting one or more locations out of the plurality of locations responsively to the figures-of-merit; and
estimating a property of the sample using the X-ray spectra measured at the selected locations.
2. The method according to claim 1 , wherein the sample comprises a semiconductor wafer, and wherein estimating the property comprises at least one of detecting a fault and estimating a process parameter in a fabrication process of the semiconductor wafer.
3. The method according to claim 1 , wherein the figures-of-merit comprise a measure of information content of the X-ray spectra.
4. The method according to claim 3 , wherein the measure of the information content comprises curve lengths of the respective X-ray spectra with the X-ray spectra expressed as reflectively values as a function of reflection angle.
5. The method according to claim 4 , wherein analyzing the X-ray spectra comprises calculating the curve lengths using a curvilinear formula.
6. The method according to claim 4 , wherein the X-Ray spectra are expressed as logarithms of the reflectivity values as a function of reflection angle.
7. The method according to claim 1 , wherein analyzing the X-ray spectra comprises at least one of pre-filtering the X-ray spectra and omitting from the X-ray spectra data points having reflectivities smaller than a predetermined threshold.
8. The method according to claim 1 , wherein defining the plurality of locations comprises at least one of accepting a definition of the locations from a user and determining the locations using an automatic pattern recognition process.
9. The method according to claim 1 , wherein the sample comprises a patterned wafer, and wherein defining the plurality of locations comprises positioning at least some of the locations on a scribe line of the wafer.
10. Apparatus for inspection of a sample, comprising:
an X-ray source, which is arranged to irradiate a surface of the sample with a beam of X-rays at a plurality of locations on the surface;
a detector assembly, which is arranged to measure a distribution of the X-rays that are emitted from the plurality of the locations responsively to the beam, so as to produce a respective plurality of X-ray spectra; and
a processor, which is arranged to analyze the X-ray spectra to produce respective figures-of-merit indicative of measurement quality of the X-ray spectra at the respective locations, to select one or more locations out of the plurality of locations responsively to the figures-of-merit, and to estimate a property of the sample using the X-ray spectra measured at the selected locations.
11. The apparatus according to claim 10 , wherein the sample comprises a semiconductor wafer, and wherein the processor is arranged to perform at least one of detecting a fault and estimating a process parameter in fabrication process of the semiconductor wafer by estimating the property.
12. The apparatus according to claim 10 , wherein the figures-of-merit comprise a measure of information content of the X-ray spectra.
13. The apparatus according to claim 12 , wherein the measure of the information content comprises curve lengths of the respective X-ray spectra with the X-ray spectra expressed as reflectivity values as a function of reflection angle.
14. The apparatus according to claim 13 , wherein the processor is arranged to calculate the curve lengths by applying a curvilinear formula.
15. The apparatus according to claim 13 , wherein the X-ray spectra are expressed as logarithms of the reflectivity values as a function of reflection angle.
16. The apparatus according to claim 10 , wherein the processor is arranged to perform at least one of pre-filtering the X-ray spectra and omitting from the X-ray spectra data points having reflectivities smaller than a predetermined threshold.
17. The apparatus according to claim 10 , wherein the processor is arranged to determine the plurality of locations using an automatic pattern recognition process.
18. The apparatus according to claim 10 , wherein the sample comprises a patterned wafer, and wherein at least some of the locations in the plurality are located on a scribe line of the wafer.
19. A cluster tool for producing microelectronic devices, comprising:
a deposition station, which is arranged to form a thin-film layer on a surface of a semiconductor wafer;
and
an inspection station, comprising:
an X-ray source, which is arranged to irradiate the surface of the semiconductor
wafer with a beam of X-rays at a plurality of locations on the surface;
a detector assembly, which is arranged to measure a distribution of the X-rays that are emitted from the plurality of the locations responsively to the beam, so as to produce a respective plurality of X-ray spectra; and
a processor, which is arranged to analyze the X-ray spectra to produce respective figures-of-merit indicative of a measurement quality of the X-ray spectra at the respective locations, to select one or more locations out of the plurality of locations responsively to the figures-of-merit, and to estimate a property of the thin-film layer using the X-ray spectra measured at the selected locations.
20. Apparatus for producing microelectronic devices, comprising:
a production chamber, which is arranged to receive a semiconductor wafer;
a deposition device, which is arranged to deposit a thin-film layer on a surface of the semiconductor wafer within the chamber;
an X-ray source, which is adapted to irradiate the surface of the semiconductor wafer in the production chamber with a beam of X-rays at a plurality of locations on the surface;
a detector assembly, which is arranged to measure a distribution of the X-rays that are emitted from the plurality of the locations responsively to the beam, so as to produce a respective plurality of X-ray spectra;
and
a processor, which is arranged to analyze the X-ray spectra to produce respective figures-of merit indicative of a measurement quality of the X-ray spectra at the respective locations, to select one or more location out of the plurality of locations responsively to the figures-of-merit, and to estimate a property of the thin-film layer using the X-ray spectra measured at the selected locations.