Method for inspecting and measuring sample and scanning electron microscope
View Patent ↗As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.
1. A scanning electron microscope comprising:
an electron source,
a lens for converging an electron beam emitted from the electron source,
a scanning deflector for scanning an electron beam on a sample, and
a detector for detecting an electron emitted from the sample, wherein;
a control device for controlling the lens and the scanning deflector is provided, and
the control device controls the scanning deflector so that, after a first electron beam is scanned to the sample to charge it, a second electron beam scans within the charged region to detect an electron emitted from the sample, and controls the lens so that the beam diameter of the first electron beam becomes larger than the beam diameter of the second electron beam.
2. The scanning electron microscope as set forth in claim 1 , wherein
the control device controls the scanning deflector so that the beam diameter of the first electron beam becomes equal to or larger than the distance between scanning lines of the first electron beam.
3. The scanning electron microscope as set forth in claim 1 , wherein
the control device controls the beam diameter by lens strength of a lens for converging the electron beam.
4. The scanning electron microscope as set forth in claim 3 , wherein
the lens is an objective lens and the control device adjusts the beam diameter by controlling an excitation amount of the objective lens.