SYSTEM AND METHOD FOR USING POROUS LOW DIELECTRIC FILMS
A system and method for manufacturing a semiconductor device including a low dielectric constant porous material layer. Ions are implanted into the low dielectric constant porous material layer which thereby provides the porous material layer with sufficient mechanical strength for withstanding semiconductor manufacturing processes. The ions implanted in the porous material layer further facilitate disposition of a conductive layer on the porous material layer.
1 . A semiconductor device comprising:
a substrate layer;
a porous material layer, wherein said porous material layer is deposited above said substrate layer; and
a plurality of ions implanted within a portion of said porous material layer, wherein said plurality of ions are implanted substantially in a top portion of said porous material layer; and
a copper layer, wherein said copper is deposited substantially on said top portion of said porous material layer comprising said plurality of ions.
2 . The semiconductor device of claim 1 wherein said plurality of ions are a noble gas.
3 . The semiconductor device of claim 2 wherein said plurality of ions are selected from the group consisting of Argon, Helium, and Xenon.
4 . The semiconductor device of claim 1 wherein said plurality of ions provide sufficient strength to said porous material layer to withstand mechanical stresses of semiconductor manufacturing.
5 . The semiconductor device of claim 1 wherein said plurality of ions are hydrophobic.
6 . The semiconductor device of claim 1 wherein said plurality of ions facilitates adhesion of said copper layer to said porous material layer.
7 . The semiconductor device of claim 1 wherein said plurality of ions prevents diffusion of said copper layer into said porous material layer.
8 . The semiconductor device of claim 1 wherein the dielectric constant of said porous material layer remains substantially unchanged after implantation of said plurality of ions.
9 . A method of manufacturing a semiconductor device, comprising:
depositing a substrate layer;
depositing a porous material layer above said substrate layer;
implanting ions in said porous material layer; and
depositing copper on said porous material layer.
10 . The method of claim 9 further comprising:
depositing an inert gas layer on said substrate layer.
11 . The method of claim 10 wherein said ions are a noble gas.
12 . The method of claim 11 wherein said ions are selected from the group consisting of Argon, Helium, and Xenon.
13 . The method of claim 9 wherein said ions provide sufficient strength to said porous material layer to withstand mechanical stresses of semiconductor manufacturing.
14 . The method of claim 9 wherein said ions are hydrophobic.
15 . The method of claim 9 wherein said ions facilitates adhesion of said copper to said porous material layer.
16 . The method of claim 9 wherein said ions prevents diffusion of said copper into said porous material layer.
17 . The method of claim 9 wherein the dielectric constant of said porous material layer remains substantially unchanged after implantation of said ions.
18 . A memory device comprising:
a semiconductor substrate;
a plurality of wires disposed above said semiconductor substrate; and
a porous material layer disposed between said semiconductor substrate and said plurality of wires, wherein said porous material layer comprises a plurality of ions wherein said ions fill a portion of pores of said porous material layer.
19 . The memory device of claim 18 wherein said plurality of ions allow use of said porous material layer without requiring an increase in thickness below said plurality of wires.
20 . The memory device of claim 18 wherein said plurality of ions facilitates adhesion of said plurality of wires to said porous material layer.