Integrated circuit with a contact structure including a portion arranged in a cavity of a semiconductor structure
View Patent ↗An integrated circuit includes a contact structure with a buried first and a protruding second portion. The buried first portion is arranged in a cavity formed in a semiconductor structure and is in direct contact with the semiconductor structure. The protruding second portion is arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure that is spaced apart from or separated from the main surface of the semiconductor structure. An insulator structure is arranged below and in direct contact with the contact structure.
1. An integrated circuit, comprising:
a contact structure comprising a first and a second portion, wherein the first portion of the contact structure is arranged in a cavity formed in a main surface of a semiconductor structure and is in direct contact with the semiconductor structure and wherein the second portion of the contact structure is arranged above the main surface and is in direct contact with a conductive structure separated from the main surface; and
an insulator structure arranged below and in direct contact with the contact structure and is arranged between a bottom of the contact structure and a portion of the semiconductor structure lying below the bottom of the contact structure.
2. An integrated circuit, comprising:
a contact structure comprising a first and a second portion, wherein the first portion of the contact structure is arranged in a cavity formed in a main surface of a semiconductor structure and is in direct contact with the semiconductor structure and wherein the second portion of the contact structure is arranged above the main surface and is in direct contact with a conductive structure separated from the main surface; and
an insulator structure arranged below and in direct contact with the contact structure, wherein:
the semiconductor structure comprises a first region of a first conductivity type adjacent to the main surface and a second region of a second conductivity type forming a pn-junction with the first region opposite the main surface; and
the contact structure is in direct contact with the first region.
3. The integrated circuit of claim 2 , wherein a distance between the insulator structure and the main surface is smaller than a distance between the pn-junction and the main surface.
4. The integrated circuit of claim 2 , wherein a portion of the pn-junction is formed in a vertical projection below the insulator structure with reference to the main surface.
5. The integrated circuit of claim 2 , wherein a portion of a lateral surface area of the first contact portion is in direct contact with the first region of the semiconductor structure.
6. The integrated circuit of claim 2 , wherein along a complete perimeter of the first portion of the contact structure is in direct contact with the first region of the semiconductor structure.
7. The integrated circuit of claim 2 , wherein the first portion of the contact structure comprises a silicided portion that is in contact with the first region of the semiconductor structure.
8. The integrated circuit of claim 2 , wherein the insulator structure completely fills a bottom portion of the cavity below the contact structure.
9. The integrated circuit of claim 2 , wherein the second portion of the contact structure is arranged in a vertical projection of the first portion of the contact structure with reference to the main surface.
10. The integrated circuit of claim 2 , wherein the first portion of the contact structure comprises a metal.
11. The integrated circuit of claim 2 , wherein the conductive structure comprises a connection line arranged in a wiring layer extending parallel to the main surface, the connection line being in direct contact with the second portion of the contact structure.
12. An integrated circuit, comprising:
a contact structure comprising a first and a second portion, wherein the first portion of the contact structure is arranged in a cavity formed in a main surface of a semiconductor structure and is in direct contact with the semiconductor structure and wherein the second portion of the contact structure is arranged above the main surface and is in direct contact with a conductive structure separated from the main surface; and
an insulator structure arranged below and in direct contact with the contact structure, wherein a cross-section of the second portion of the contact structure parallel to the main surface corresponds in both shape and material to a cross-section of the first portion of the contact structure parallel to the main surface.
13. An integrated circuit, comprising:
a field effect transistor comprising a source/drain region adjacent a main surface of a semiconductor structure, the source/drain region being of a first conductivity type and being embedded in a well structure of a second conductivity type such that a pn-junction is formed between the source/drain region and the well structure;
a contact structure comprising:
a first portion arranged in a cavity in the semiconductor structure and in direct contact with the source/drain region; and
a second portion arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure, the conductive structure being separated from the main surface; and
an insulator structure arranged below and in direct contact with the contact structure.
14. The integrated circuit of claim 13 , wherein the insulator structure completely fills a bottom portion of the cavity below the contact structure.
15. The integrated circuit of claim 13 , wherein a distance between the insulator structure and the main surface of the semiconductor structure is smaller than a distance between the pn-junction and the main surface of the semiconductor structure.
16. The integrated circuit of claim 13 , wherein a portion of a lateral surface area of the first contact portion is in direct contact with the source/drain region.
17. The integrated circuit of claim 13 , wherein the first portion of the contact structure comprises a non-silicided portion and a silicided portion being arranged between the source/drain region and the non-silicided portion.
18. The integrated circuit of claim 13 , wherein a cross-section of the second portion of the contact structure parallel to the main surface corresponds in both shape and material to a cross-section of the first portion of the contact structure parallel to the main surface.
19. The integrated circuit of claim 13 , wherein the conductive structure comprises a connection line arranged in a wiring plane extending parallel to the main surface, the connection line being in direct contact with the second portion of the contact structure.
20. An integrated circuit, comprising:
a semiconductor structure including a cavity disposed in a main surface thereof;
a contact structure arranged in the cavity and in contact with the semiconductor structure, wherein the contact structure comprises a metal and a portion of the contact structure protrudes from the semiconductor structure; and
an insulator structure disposed in a bottom portion of the cavity and between the semiconductor structure and the contact structure, the insulator structure being in direct contact with the contact structure and completely filling the bottom portion of the cavity below the contact structure such that a horizontal cross-sectional area and shape of the insulator structure is approximately equal to that of an adjacent portion of the contact structure.