Copper precursors for thin film deposition
View Patent ↗Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
1. A copper precursor for depositing films via chemical vapor deposition or atomic layer deposition represented by formula (I):
wherein R 1 and R 3 are each independently selected from an alkyl having a formula C n H 2n+1 wherein n is a number ranging from 1 to 4; wherein R 4 is selected from the group consisting of propyl, butyl and pentyl, with the proviso that R 4 is always bonded to the oxygen through the second carbon of R 4 from the nitrogen atom.
2. Cu(MeC(O)CHC(NCH 2 CHMeOSiMe 2 C 2 H 3 )Me).
3. Cu(MeC(O)CHC(NCH 2 CHEtOSiMe 2 C 2 H 3 )Me).
4. Cu(MeC(O)CHC(NCH 2 CHPrOSiMe 2 C 2 H 3 )Me).
5. An electronic device comprising a copper film wherein the film is deposited via a process selected from atomic layer deposition or chemical vapor deposition from a reaction mixture comprising Cu(MeC(O)CHC(NCH 2 CHMeOSiMe 2 C 2 H 3 )Me) and a reducing agent comprising at least one selected from hydrogen, a carboxylic acid, an alcohol, a carboxylic ester, a silane, a borane, an alane, a germane, a hydrazine, ammonia, or mixtures thereof.
6. The electronic device of claim 5 wherein the reducing agent comprises carboxylic acid.
7. The electronic device of claim 6 wherein the carboxylic acid comprises formic acid.
8. A process for forming a copper film on an at least one surface of a diffusion barrier layer, the process:
providing the at least one surface of the diffusion barrier layer; and
forming the copper film on at least a portion of the surface by either a chemical vapor deposition process or an atomic layer deposition process with a copper precursor having the following formula (I):
wherein R 1 and R 3 are each independently selected from an alkyl having a formula C n H 2n+1 wherein n is a number ranging from 1 to 4; wherein R 4 is selected from the group consisting of propyl, butyl and pentyl, with the proviso that R 4 is always bonded to the oxygen through the second carbon of R 4 from the nitrogen atom.
9. The process of claim 8 wherein the forming process further comprises introducing a reducing agent comprising a carboxylic acid.
10. The process of claim 9 wherein the carboxylic acid comprises formic acid.
11. The process of claim 10 wherein the copper film comprises a surface roughness (Ra) of 20 (Å) or less.
12. The process of claim 8 wherein the diffusion barrier layer comprises ruthenium.
13. The process of claim 8 wherein the diffusion barrier layer comprises titanium.
14. The process of claim 8 wherein the diffusion barrier layer comprises tantalum.