Control circuit in a memory chip
View Patent ↗Embodiments of the invention relate to a control circuit comprising a clock signal connection for receiving a system clock signal, a write signal connection for receiving a write signal, and a write control circuit for executing write commands, wherein the write control circuit is designed to start executing a write command when a write signal is applied to the write signal connection during an edge of the system clock signal.
1. A control circuit, comprising:
a clock signal connection for receiving a system clock signal,
a write signal connection for receiving a write signal,
a write control circuit for executing write commands,
wherein the write control circuit is adapted to start executing a write command when the write signal is applied to the write signal connection at a first edge of the system clock signal,
wherein the write control circuit comprises a plurality of configuration signal connections for receiving configuration information,
wherein the configuration information comprises information about a set write latency, and write operations are executed within a time that is shorter than the set write latency, and
wherein the write control circuit is adapted to use a clock period, which precedes a second edge of the system clock signal that prompts the execution of the write command, as a first clock period of the set write latency,
a read signal connection for receiving a read signal, and
a read control circuit for executing read commands,
wherein the read commands and the write commands are executed in different clock domains.
2. The control circuit according to claim 1 , wherein the control circuit is adapted to control burst access operations in a memory chip.
3. The control circuit according to claim 1 , further comprising a plurality of output signal connections adapted to provide output signals, and wherein the write control circuit is adapted to provide said output signals which are in synch with the system clock signal and which are delayed in comparison with the system clock signal by a predefined period.
4. The control circuit according to claim 1 , wherein the write operations are executed within a time which is shorter than the set write latency by approximately one clock cycle.
5. The control circuit according to claim 1 , further comprising a clock generator circuit for generating an internal burst clock signal which is delayed in comparison with the system clock signal by a predefined period.
6. The control circuit according to claim 5 , wherein
the read control circuit is adapted to start executing a read command when the read signal is applied to the read signal connection during an edge of the burst clock signal, and
the read control circuit is adapted to execute the read command in synch with the burst clock signal.
7. The control circuit according to claim 5 , wherein the edges of the system and burst clock signals are rising edges.
8. A memory apparatus, comprising: a control circuit, the control circuit comprising:
a clock signal connection for receiving a system clock signal,
a write signal connection for receiving a write signal,
a write control circuit for executing write commands,
wherein the write control circuit is adapted to start executing a write command when the write signal is applied to the write signal connection at a first edge of the system clock signal,
wherein the write control circuit comprises a plurality of configuration signal connections for receiving configuration information,
wherein the configuration information comprises information about a set write latency, and write operations are executed within a time shorter than the set write latency, and
wherein the write control circuit is configured to use a clock period, which precedes a second edge of the system clock signal that prompts the execution of the write command, as a first clock period of the set write latency,
a read control circuit for executing read commands, and
a read signal connection for receiving a read signal,
wherein the read control circuit and the write control circuit are configured to execute the read commands and the write commands, respectively, in different clock domains.
9. The memory apparatus according to claim 8 , wherein the control circuit is adapted to control burst access operations in a memory chip.
10. The memory apparatus according to claim 8 , further comprising:
a plurality of output signal connections for providing output signals, and wherein the write control circuit is adapted to provide said output signals which are in synch with the system clock signal and which are delayed in comparison with the system clock signal by a stipulated period.
11. The memory apparatus according to claim 8 , wherein the write operations are executed within a time shorter than the set write latency by approximately one clock cycle.
12. The memory apparatus according to claim 8 , further comprising a clock generator circuit for generating an internal burst clock signal which is delayed in comparison with the system clock signal by a stipulated period.
13. The memory apparatus according to claim 12 , wherein
the read control circuit is adapted to start executing a read command when the read signal is applied to the read signal connection during an edge of the burst clock signal, and
the read control circuit is adapted to execute the read command in synch with the burst clock signal.
14. The memory apparatus according to claim 13 , wherein the respective edges of the system clock signal and the burst clock signal are rising edges.