Method of fabricating an ultra-small condenser microphone
View Patent ↗In the present invention, a semiconductor substrate wherein a plurality of MEMS microphones is formed is disposed opposed to a discharge electrode in a state of being stuck on a sheet. Electretization of a dielectric film provided in the MEMS microphone is performed by irradiating the dielectric film between a fixed electrode and a vibration film provided in the MEMS microphone with ions resulting from a corona discharge of the discharge electrode in a state that a predetermined potential difference is applied to the fixed electrode and the vibration film and fixing charges based on the ions to the dielectric film. The electretization is successively performed to each MEMS microphone on the semiconductor substrate by relatively moving the semiconductor substrate and the discharge electrode. Therefore, electretization of the dielectric film in the MEMS microphone chip is realized using a low-cost and simple fabricating equipment and productivity can be enhanced.
1. A method of fabricating an ultra-small condenser microphone, comprising the steps of:
(a) forming a plurality of ultra-small condenser microphones, each of the ultra-small condenser microphones including a semiconductor substrate, and a fixed electrode arranged opposite a vibration electrode via a space and a dielectric film arranged between the fixed and vibration electrodes, the fixed electrode and the vibration electrode being disposed on the semiconductor substrate;
(b) after the step (a), sticking a sheet on a first surface of the semiconductor substrate, the first surface being opposite to a second surface on which the vibration electrode is formed;
(c) after the step (b), disposing the ultra-small condenser microphone facing a tip of a needle discharge electrode;
(d) after the step (c), performing electretization for fixing charges in the dielectric film by irradiating each dielectric film arranged between each fixed electrode and each vibration electrode provided in the plurality of the ultra-small condenser microphones with ions generated from the discharge electrode in a state that a predetermined potential difference is given between the fixed electrode and the vibration electrode in each ultra-small condenser microphones; and
(e) after the step (d), separating the semiconductor substrate stuck on the sheet into individual ultra-small condenser microphone pieces.
2. A method according to claim 1 , wherein the ultra-small condenser microphone to be electretized is selected by giving the potential difference between the fixed electrode and the vibration electrode and a time to electretize is adjusted with a time to give the potential difference.
3. A method according to claim 1 , wherein static electricity is removed by giving a ground potential to the fixed electrode and the vibration electrode before giving the potential difference between the fixed electrode and the vibration electrode.
4. A method according to claim 1 , wherein the predetermined potential difference is given between the fixed electrode and the vibration electrode through probe pins.
5. A method according to claim 1 , wherein, using a unit configured to switch a conducting state and a non-conducting state interposed in each electrical path to apply a voltage in order to give the predetermined potential difference to the fixed electrode and the vibration electrode provided in each of the ultra-small condenser microphones to be simultaneously electretized, a part of the electrical paths is to be the non-conducting state in order to stop giving the potential difference selectively.
6. A method according to claim 5 , wherein the unit configured to switch the conducting state and the non-conducting state is arranged on a probe card or on a board to which the probe card is connected.
7. A method according to claim 1 , wherein the discharge electrode is arranged in a wafer prober, and the semiconductor substrate wherein the plurality of the ultra-small condenser microphone is formed is disposed on a stage provided in the wafer prober.
8. A method according to claim 1 , wherein a distance between the disposed semiconductor substrate and the discharge electrode is adjustable.
9. A method according to claim 1 , wherein
in the step (c), a cover having an opening is arranged between the ultra-small condenser microphone and the needle discharge electrode, and
in the step (d), the dielectric film is electretized by the ions passed through the opening of the cover.
10. A method of fabricating an ultra-small condenser microphone, comprising the steps of:
(a) forming a plurality of ultra-small condenser microphones, each of the ultra-small condenser microphones including a semiconductor substrate, and a fixed electrode arranged opposite a vibration electrode via a space and a dielectric film arranged between the fixed and vibration electrodes, the fixed electrode and the vibration electrode being disposed on the semiconductor substrate;
(b) after the step (a), sticking a sheet on a first surface of the semiconductor substrate, the first surface being opposite to a second surface on which the vibration electrode is formed;
(c) after the step (b), disposing the ultra-small condenser microphone facing a linear discharge electrode;
(d) after the step (c), performing electretization for fixing charges in the dielectric film by irradiating each dielectric film arranged between each fixed electrode and each vibration electrode provided in the plurality of the ultra-small condenser microphones with ions generated from the discharge electrode in a state that a predetermined potential difference is given between the fixed electrode and the vibration electrode in each ultra-small condenser microphone; and
(e) after the step (d), separating the semiconductor substrate stuck on the sheet into individual ultra-small condenser microphone pieces.
11. A method according to claim 10 , wherein the ultra-small condenser microphone to be electretized is selected by giving the potential difference between the fixed electrode and the vibration electrode and a time to electretize is adjusted with a time to give the potential difference.
12. A method according to claim 10 , wherein static electricity is removed by giving a ground potential to the fixed electrode and the vibration electrode before giving the potential difference between the fixed electrode and the vibration electrode.
13. A method according to claim 10 , wherein the predetermined potential difference is given between the fixed electrode and the vibration electrode through probe pins.
14. A method according to claim 10 , wherein, using a unit configured to switch a conducting state and a non-conducting state interposed in each electrical path to apply a voltage in order to give the predetermined potential difference to the fixed electrode and the vibration electrode provided in each of the ultra-small condenser microphones to be simultaneously electretized, a part of the electrical paths is to be the non-conducting state in order to stop giving the potential difference selectively.
15. A method according to claim 10 , wherein the discharge electrode is arranged in a wafer prober, and the semiconductor substrate wherein the plurality of the ultra-small condenser microphone is formed is disposed on a stage provided in the wafer prober.
16. A method according to claim 10 , wherein a distance between the disposed semiconductor substrate and the discharge electrode is adjustable.
17. A method according to claim 10 , wherein
in the step (c), a cover having an opening is arranged between the ultra-small condenser microphone and the linear needle discharge electrode, and
in the step (d), the dielectric film is electretized by the ions passed through the opening of the cover.