Precursors for CVD silicon carbo-nitride films
View Patent ↗Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R 1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R 1 in formula A also being combinable into a cyclic group, and R 2 representing a single bond, (CH 2 ) n , a ring, or SiH 2 .
1. An aminosilane precursor comprising the following formula A:
wherein R and R 1 are each independently selected from the group consisting of isopropyl, t-butyl, sec-butyl, t-pentyl, and sec-pentyl groups.
2. The aminosilane precursor of claim 1 wherein R and R 1 are isopropyl groups.
3. The aminosilane precursor of claim 1 wherein R and R 1 are sec-butyl groups.
4. The aminosilane precursors of claim 1 wherein R and R 1 are combined into a cyclic group.
5. An aminosilane comprising the following formula B:
wherein R is selected from the group consisting of t-pentyl and cyclohexyl groups.
6. The aminosilane of claim 5 wherein R is a cyclohexyl group.
7. A precursor used for the deposition of silicon-containing films wherein the precursor is selected from the group having the formulas:
8. An aminosilane used for the deposition of silicon-containing films selected from the group consisting of cyclohexyldisilylamine, 2,4-dicyclohexyl-2,4-diaza-1,3,5-trisilapentane, diisopropylaminosilane, 2,4-di-tert-butyl-2,4-diaza-1,3,5-trisilapentane, and combinations thereof.
9. A composition for forming a silicon-containing film comprising diisopropylaminosilane.