Tellurium precursors for GST films in an ALD or CVD process

1. A method of depositing tellurium - containing film on a semiconductor substrate, comprising

a. providing a tellurium precursor to the semiconductor substrate, the tellurium precursor selected from the group consisting of (R 1 R 2 R 3 Si) 2 Te; (R 1 R 2 R 3 Si)TeR 4 ; and (R 1 R 2 R 3 Si)TeN(R 4 R 5 ), where R 1 ,R 2 ,R 3 ,R 4 and R 5 are individually hydrogen, alkyl groups with 1 to 10 carbons in linear, branched, or cyclic form, or an aromatic group;

b. providing an alcohol to the semiconductor substrate to react with the tellurium precursor to form a tellurium layer; and,

c. maintaining a deposition temperature from 80° C. to 500° C.

2. The method of claim 1 in which an antimony precursor, selected from the group consisting of (R 1 R 2 N) 3 Sb, where R 1 and R 2 are individually alkyl groups with 1 to 10 carbons in chain, branched, or cyclic form, is provided to the semiconductor substrate and reacts with the tellurium-containing film and thereby forming a antimony-tellurium-containing film.

3. The method of claim 2 in which a germanium precursor selected from a group consisting with (R 1 R 2 N) 4 Ge, where R 1 and R 2 are individually alkyl groups with 1 to 10 carbons in chain, branched, or cyclic form, is provided to the semiconductor substrate and reacts with the antimony-tellurium-containing film and thereby forming a germanium-antimony-tellurium ternary film.

4. The method of claim 1 in which a germanium precursor selected from a group consisting with (R 1 R 2 N) 4 Ge, where R 1 and R 2 are individually alkyl groups with 1 to 10 carbons in chain, branched, or cyclic form, is provided to the semiconductor substrate and reacts with the tellurium-containing film and thereby forming a germanium-tellurium-containing film.

5. The method of claim 1 in which the alcohol has a general formula of ROH, where R is an alkyl group with 1 to 10 carbon atoms in a linear, branched, or cyclic form, or an aromatic group.

6. The method of claim 1 in which the alcohol has a general formula of ROH, where R is an alkyl group with 1 to 10 carbon atoms in a linear, branched, or cyclic form, or an aromatic group.

7. A method of forming germanium-antimony-tellurium film using atomic layer deposition on a semiconductor substrate in a reactor, comprising;

a. providing a tellurium precursor to the semiconductor substrate, the tellurium precursor selected from the group consisting of (R 1 R 2 R 3 Si) 2 Te;

(R 1 R 2 R 3 Si)TeR 4 ; and (R 1 R 2 R 3 Si)TeN(R 4 R 5 ), where R 1 ,R 2 ,R 3 ,R 4 and R 5 are individually hydrogen, alkyl groups with 1 to 10 carbons in linear, branched, or cyclic form, or an aromatic group;

b. purging the reactor with inert gas;

c. providing an alcohol to the reactor to react with the tellurium precursor to form a tellurium layer on the semiconductor substrate;

d. purging the reactor with inert gas;

e. providing an antimony precursor, selected from the group consisting of (R 1 R 2 N) 3 Sb, where R 1 and R 2 are individually alkyl groups with 1 to 10 carbons in chain, branched, or cyclic form, to the reactor to form an antimony layer;

f. purging the reactor with inert gas;

g. providing a germanium precursor selected from a group consisting with (R 1 R 2 N) 4 Ge, where R 1 and R 2 are individually alkyl groups with 1 to 10 carbons in chain, branched, or cyclic form, to the reactor to form a germanium layer;

h. purging the reactor with inert gas and,

i. repeating the steps a through step h to change thickness of germanium-antimony-tellurium film.

8. The method of claim 7 wherein steps a through d are repeated two or more times before steps e through h.

9. The method of claim 7 wherein steps a through d are conducted first.

10. The method of claim 7 wherein steps e through f are conducted first.

11. The method of claim 7 wherein steps g through h are conducted first.

12. A method of forming germanium-antimony-tellurium film using chemical vapor deposition on a semiconductor substrate in a reactor, comprising;

a. providing a tellurium precursor to the semiconductor substrate, the tellurium precursor selected from the group consisting of (R 1 R 2 R 3 Si) 2 Te;

(R 1 R 2 R 3 Si)TeR 4 ; and (R 1 R 2 R 3 Si)TeN(R 4 R 5 ), where R 1 ,R 2 ,R 3 ,R 4 and R 5 are individually hydrogen, alkyl groups with 1 to 10 carbons in linear, branched, or cyclic form, or an aromatic group;

b. purging the reactor with inert gas for 0.1 to 1 second;

c. providing an alcohol to the reactor to react with the tellurium precursor to form a tellurium layer on the semiconductor substrate;

d. purging the reactor with inert gas for 0.1 to 1 second;

e. providing an antimony precursor, selected from the group consisting of (R 1 R 2 N) 3 Sb, where R 1 and R 2 are individually alkyl groups with 1 to 10 carbons in chain, branched, or cyclic form, to the reactor to form an antimony layer;

f. purging the reactor with inert gas for 0.1 to 1 second;

g. providing a germanium precursor selected from a group consisting with (R 1 R 2 N) 4 Ge, where R 1 and R 2 are individually alkyl groups with 1 to 10 carbons in chain, branched, or cyclic form, to the reactor to form a germanium layer; and,

h. repeating the steps between step a and step g to change thickness of germanium-antimony-tellurium film.

13. The method of claim 12 in which the alcohol has a general formula of ROH, where R is an alkyl group with 1 to 10 carbon atoms in a linear, branched, or cyclic form, or an aromatic group.

14. The method of claim 12 wherein steps a through d are repeated two or more times before steps e through h.

15. The method of claim 12 wherein steps a through d are conducted first.

16. The method of claim 12 wherein steps e through f are conducted first.

17. The method of claim 12 wherein steps g through h are conducted first.