System and method for measuring negative bias thermal instability with a ring oscillator
View Patent ↗An integrated circuit, in accordance with one embodiment of the present invention, includes a first device under test (DUT), a first ring oscillator, a second DUT and a second ring oscillator. The first DUT is biased such that interface traps are generated during a first mode. The generated interface traps result in a decrease in a first drive current of the first DUT. The second device under test is biased to maintain a reference drive current during the first mode. The operating frequency of the first ring oscillator, during a second mode, is a function of the first drive current. The operating frequency of the second ring oscillator, during the second mode, is a function of the reference drive current. The integrated circuit may also include a comparator for generating an output signal as a function of a difference between the operating frequency of the first and second ring oscillator.
1. An integrated circuit comprising:
a first component operable to generate a first signal at a first mode, wherein said first signal is related to a drive current of said first component at said first mode; and
a second component operable to generate a second signal at said first mode, wherein said second signal is related to a drive current of said second component at said first mode,
wherein a difference between said first signal and said second signal is indicative of negative bias thermal instability (NBTI) degeneration in said first component.
2. The integrated circuit as described in claim 1 , wherein said first component generates negative bias thermal instability (NBTI) at a second mode, and wherein a threshold voltage and a drive voltage of said second component remains substantially constant.
3. The integrated circuit as described in claim 2 , wherein said NBTI results in an increase in a threshold voltage and a decrease in a drive current of said first component over time.
4. The integrated circuit as described in claim 1 , wherein said first component comprises a first device under test module and a first ring oscillator module, and wherein said second component comprises a second device under test module and a second ring oscillator module.
5. The integrated circuit as described in claim 4 , wherein:
said first device under test module comprises a p-channel metal-oxide-semiconductor field effect transistor; and
said second device under test module comprises a p-channel metal-oxide-semiconductor field effect transistor.
6. The integrated circuit as described in claim 4 , wherein:
said first device under test module comprises an n-channel metal-oxide-semiconductor field effect transistor; and
said second device under test module comprises an n-channel metal-oxide-semiconductor field effect transistor.
7. The integrated circuit as described in claim 4 , wherein:
said first device under test module comprises a p-channel metal-oxide-semiconductor field effect transistor and an n-channel metal-oxide-semiconductor field effect transistor; and
said second device under test module comprises a p-channel metal-oxide-semiconductor field effect transistor and an n-channel metal-oxide-semiconductor field effect transistor.
8. The integrated circuit as described in claim 4 , wherein:
said first device under test module is coupled in series in a feedback loop of said first ring oscillator module; and
said second device under test module is coupled in series in a feedback loop of said second ring oscillator module.
9. The integrated circuit as described in claim 1 , further comprising a comparator module for generating an output signal as a function of said difference between said first signal and said second signal.
10. The integrated circuit as described in claim 9 , wherein said comparator module is an external component.
11. The integrated circuit as described in claim 1 , wherein said first signal is at an operating frequency of said first component and said second signal is at an operating frequency of said second component.
12. An integrated circuit comprising:
means for generating a first signal at a first mode, wherein said first signal is related to a drive current of a first component at said first mode; and
means for generating a second signal at said first mode, wherein said second signal is related to a drive current of a second component at said first mode,
wherein a difference between said first signal and said second signal is indicative of negative bias thermal instability (NBTI) degeneration in said first component.
13. The integrated circuit as described in claim 12 , wherein said first component generates NBTI at a second mode, wherein said NBTI results in an increase in a threshold voltage and a decrease in a drive current of said first component over time, and wherein a threshold voltage and a drive voltage of said second component remains substantially constant.
14. An integrated circuit comprising:
a first device under test module;
a second device under test module;
a plurality of ring oscillators, each coupled to a respective device under test module; and
a comparator including a first input coupled to at least one of said ring oscillators and a second input coupled to at least one of said ring oscillators,
wherein said comparator is operable to generate an output signal indicative of negative bias thermal instability (NBTI) degeneration in at least one of said first and second device under test modules.
15. The integrated circuit of claim 14 , wherein said first device under test module is operable to generate a first signal at a first mode, wherein said first signal is related to a drive current of said first device under test module at said first mode.
16. The integrated circuit of claim 15 , wherein said second device under test module is operable to generate a second signal at said first mode, wherein said second signal is related to a drive current of said second device under test module at said first mode.
17. The integrated circuit of claim 16 , wherein said output signal represents a difference between said first signal and said second signal, and wherein said negative bias thermal instability (NBTI) degeneration is in said first device under test module.
18. The integrated circuit of claim 14 , wherein:
said first device under test module comprises a p-channel metal-oxide-semiconductor field effect transistor; and
said second device under test module comprises a p-channel metal-oxide-semiconductor field effect transistor.
19. The integrated circuit of claim 14 , wherein:
said first device under test module comprises an n-channel metal-oxide-semiconductor field effect transistor; and
said second device under test module comprises an n-channel metal-oxide-semiconductor field effect transistor.
20. The integrated circuit of claim 14 , wherein:
said first device under test module comprises a p-channel metal-oxide-semiconductor field effect transistor and an n-channel metal-oxide-semiconductor field effect transistor; and
said second device under test module comprises a p-channel metal-oxide-semiconductor field effect transistor and an n-channel metal-oxide-semiconductor field effect transistor.