Current-carrying structures fabricated using voltage switchable dielectric materials
A method comprises providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.
1. A device comprising:
a voltage switchable dielectric (VSD) material;
at least one via passing through the VSD material, wherein a via of the at least one via comprises a conductive sleeve that extends through the via;
a conductive material bonded to the VSD material via an electrochemical bond; and
a pin receptacle, wherein the pin receptacle passes through the VSD material and at least a portion of the conductive material is plated on the bottom surface of the pin receptacle,
wherein at least a portion of the VSD material form an interior structure of a pin connector, the interior structure is separated by a plurality of segments to expose a length of the pin receptacle, and
wherein the VSD material is disposed within a substrate of the device and is configured to be nonconductive during operation of the device and configured to be conductive in response to a voltage that exceeds a characteristic voltage of the VSD material to protect the device against electrical damage.
2. The device of claim 1 , wherein at least a portion of the conductive material is deposited on at least a portion of the conductive sleeve of the via.
3. The device of claim 1 , wherein the substrate of the device is a PCB or the packaging of a semiconductor chip.
4. A device comprising:
a VSD material;
a via passing through the VSD material, wherein the via comprises a conductive sleeve that extends through the via;
a conductive material bonded to the VSD material via an electrochemical bond; and
a pin receptacle, wherein the pin receptacle passes through the VSD material and at least a portion of the conductive material is plated on the bottom surface of the pin receptacle, and wherein at least a portion of the VSD material form an interior structure of a pin connector, the interior structure is separated by a plurality of segments to expose a length of the pin receptacle.
5. The device of claim 4 , wherein at least a portion of the conductive material is bonded within at least a portion of the conductive sleeve of the via.
6. A device comprising:
a VSD material having a characteristic voltage;
a via passing through the VSD material, wherein the via comprises a conductive sleeve that extends through the via; and
a first conductor and a second conductor separated by the VSD material, wherein the first conductor and the second conductor are bonded to the VSD material at least in part by an electrochemical bond formed while the VSD material is maintained in a conductive state in the presence of a voltage that exceeds the characteristic voltage; and
a pin receptacle, wherein the pin receptacle passes through the VSD material and at least a portion of the conductive material is plated on a bottom surface of the pin receptacle, and wherein at least a portion of the VSD material form an interior structure of a pin connector, the interior structure is separated by a plurality of segments to expose a length of the pin receptacle.
7. The device of claim 6 , wherein at least a portion of the conductive material is bonded within at least a portion of the conductive sleeve of the via.