A polishing pad provides excellent optical detection accuracy properties over a broad wavelength range (particularly at the short-wavelength side) and is capable of preventing a slurry from leaking from the boundary between a polishing region and a light-transmitting region. The polishing pad includes at least a transparent support film laminated on one side of a polishing layer including a polishing region and a light-transmitting region; the light transmittance of an optical detection region containing at least the light-transmitting region and the transparent support film is 40% or more in the overall range of wavelengths of 300 to 400 nm.
1. A polishing pad comprising at least a transparent support film laminated on one side of a polishing layer including a polishing region and a light-transmitting region,
wherein the light transmittance of an optical detection region containing at least the light-transmitting region and the transparent support film is 40% or more in the overall range of wavelengths of 300 to 400 nm, and
wherein the density of aromatic rings in a polymer as a main material of each member constituting the optical detection region is 2 wt % or less in total.
2. The polishing pad according to claim 1 , wherein the polymer as a main material of the light-transmitting region is a polyurethane resin, and an isocyanate component of the polyurethane resin is at least one member selected from the group consisting of 1,6-hexamethylenediisocyanate, 4,4′-dicyclohexylmethanediisocyanate, and isophoronediisocyanate.
3. The polishing pad according to claim 1 , wherein the polymer as a main material of the transparent support film is at least one member selected from the group consisting of polypropylene, polyethylene, aliphatic polyamide, polymethyl acrylate, polymethyl methacrylate, and polyvinyl chloride.
4. A method for manufacturing a semiconductor device, which comprises a process of polishing the surface of a semiconductor wafer with the polishing pad according to claim 1 , 2 , or 3 .