Method for producing polycrystalline silicon, and facility for producing polycrystalline silicon

1. A method for producing polycrystalline silicon, comprising:

reacting trichlorosilane and hydrogen to produce polycrystalline silicon and a remainder comprising monosilanes, formula: SiH n Cl 4-n , wherein n is 0 to 4, containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes;

depositing the polycrystalline silicon on a surface of a red-hot silicon rod, and

supplying said remainder and hydrogen to a conversion reactor and heating at a temperature within the range of 600 to 1,400° C. to convert silicon tetrachloride into trichlorosilane and said polymer into monosilanes,

wherein said remainder produced by reacting trichlorosilane and hydrogen is introduced into a cooler to separate hydrogen and hydrogen chloride from said remainder; the resultant is introduced into a first distillation column to separate trichlorosilane; the column-bottom component of the first distillation column is introduced into a second distillation column to separate silicon tetrachloride; the column-bottom component of the second distillation column is introduced into a third distillation column to separate a polymer; and the polymer separated in the third distillation column and silicon tetrachloride separated in the second distillation column are introduced into the conversion reactor, and hydrogen is further introduced into the conversion reactor, to effect a reaction.

2. The method for producing polycrystalline silicon according to claim 1 , wherein said polymer is supplied to said conversion reactor so that the concentration of said polymer in said conversion reactor becomes within the range of 0.01 to 1 mol %.

3. The method for producing polycrystalline silicon according to claim 1 , wherein a supplying conduit for supplying said polymer to said conversion reactor is heated at a temperature within the range of 60 to 300° C.

4. A facility for producing polycrystalline silicon, comprising:

a production reactor for reacting trichlorosilane and hydrogen to produce polycrystalline silicon and a remainder comprising monosilanes, formula: SiH n Cl 4-n , wherein n is 0 to 4, containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes;

a silicon rod on which polycrystalline silicon are deposited;

a conversion reactor to which said remainder and hydrogen are supplied and heated at a temperature within the range of 600 to 1,400° C. to convert silicon tetrachloride into trichlorosilane and said polymer into monosilanes,

a cooler for cooling said remainder produced by reacting trichlorosilane and hydrogen to separate hydrogen and hydrogen chloride from said remainder;

a first distillation column for distilling the resulting cooled generated gas to separate trichlorosilane;

a second distillation column for distilling the column-bottom component of the first distillation column to separate silicon tetrachloride;

a third distillation column for distilling the column-bottom component of the second distillation column to separate a polymer; and

a conversion reactor to which the polymer separated in the third distillation column and silicon tetrachloride separated in the second distillation column are supplied, and hydrogen is further supplied, to effect a conversion reaction.

5. The facility for producing polycrystalline silicon according to claim 4 , wherein said polymer is supplied to said conversion reactor so that the concentration of said polymer in said conversion reactor becomes within the range of 0.01 to 1 mol %.

6. The facility for producing polycrystalline silicon according to claim 4 , which further comprises a supplying conduit for supplying said polymer to said conversion reactor, and a conduit-heating mechanism for heating said conduit at a temperature within the range of 60 to 300° C.

7. The method for producing polycrystalline silicon according to claim 2 , wherein a supplying conduit for supplying said polymer to said conversion reactor is heated at a temperature within the range of 60 to 300° C.

8. The facility for producing polycrystalline silicon according to claim 5 , which further comprises a supplying conduit for supplying said polymer to said conversion reactor, and a conduit-heating mechanism for heating said conduit at a temperature within the range of 60 to 300° C.

9. The method for producing polycrystalline silicon according to claim 1 , wherein silicon tetrachloride is converted into trichlorosilane by a reaction represented by the following formula: SiCl 4 +H 2 →SiHCl 3 +HCl.