IP Library Granted Patent US 8,115,184
Granted Patent B2
US 8,115,184 · App. 12/318,583 · Granted Feb 14, 2012

Gas field ion source, charged particle microscope, and apparatus

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Quick Facts
Patent No.
US 8,115,184
App. No.
12/318,583
Granted
Feb 14, 2012
Kind
B2
Abstract

A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Claims (34)

1. A gas field ion source comprising:

an acicular anode emitter tip;

a gas molecule ionization chamber that supplies gas molecules to the vicinity of the apex of the emitter tip and ionizes the gas molecules by an electric field at the apex of the emitter tip; and

a vacuuming system,

wherein the gas field ion source is provided with a mechanism to change a conductance in the vacuuming of the gas molecule ionization chamber.

2. The gas field ion source according to claim 1 , wherein the mechanism to change the conductance is a mechanism to change the conductance in proportion to the temperature of the gas molecule ionization chamber.

3. The gas field ion source according to claim 2 , wherein the mechanism to change the conductance in proportion to the temperature of the gas molecule ionization chamber changes the conductance to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

4. The gas field ion source according to claim 1 , wherein parts of the members constituting the mechanism to change the conductance are made of a bimetal alloy.

5. A gas field ion source including an acicular anode emitter tip, a gas molecule ionization chamber that supplies gas molecules to the vicinity of the apex of the emitter tip and ionizes the gas molecules by an electric field at the apex of the emitter tip, and a vacuuming system, the gas field ion source further comprising:

a temperature control system capable of heating the gas molecule ionization chamber.

6. The gas field ion source according to claim 5 , wherein the temperature control system capable of heating the gas molecule ionization chamber is an electric resistance heater attached to the outer wall of the gas molecule ionization chamber.

7. The gas field ion source according to claim 6 , wherein the gas field ion source has a plurality of electric wires connected to the electric resistance heater and a mechanism that can connect and disconnect by switching at least one of the plurality of electric wires.

8. The gas field ion source according to claim 7 , wherein the switchable mechanism is formed by using a bimetal alloy.

9. The gas field ion source according to claim 5 , wherein the temperature control system capable of heating the gas molecule ionization chamber is a system that supplies a high temperature gas to the gas ionization chamber.

10. A gas field ion source including an acicular anode emitter tip, a mechanism to retain the emitter tip, a gas molecule ionization chamber that supplies gas molecules to the vicinity of the apex of the emitter tip and ionizes the gas molecules by an electric field at the apex of the emitter tip, and a vacuuming system, the gas field ion source further comprising:

a cooling system that cools the emitter tip, the emitter tip retention mechanism, and the gas molecule ionization chamber,

wherein the emitter tip retention mechanism is movable from the gas molecule ionization chamber, and

wherein the emitter tip retention mechanism is connected to the cooling system with a mechanically flexible member.

11. The gas field ion source according to claim 10 , wherein a coolant in the cooling system is a solid state coolant that is in the state of a gas at room temperature under atmospheric pressure.

12. A gas field ion source including an acicular anode emitter tip, a gas molecule ionization chamber that supplies gas molecules to the vicinity of the apex of the emitter tip and ionizes the gas molecules by an electric field at the apex of the emitter tip, and a vacuuming system, the gas field ion source further comprising:

a filament capable of heating the acicular anode emitter tip by electrification;

a plurality of wires that supplies electricity to the filament; and

a mechanism that switchably connects or disconnects at least one of the plurality of wires.

13. The gas field ion source according to claim 12 , wherein the switchable mechanism is formed by using a bimetal alloy.

14. A charged particle microscope comprising:

a gas field ion source according to any one of claims 5 to 8 and 10 to 13 ;

a lens system that focuses ions extracted from the gas field ion source;

a secondary particle detector that detects secondary particles; and

an image display unit that displays an ion microscopic image.

15. A gas field ion source comprising:

an acicular anode emitter tip;

a gas molecule ionization chamber to supply gas molecules to the vicinity of the apex of the emitter tip and ionize the gas molecules by an electric field at the apex of the emitter tip; and

a vacuuming system,

wherein the gas molecules are helium molecules and the vacuuming system includes a non evaporable getter pump.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2008
From: SHICHI, HIROYASU; MATSUBARA, SHINICHI; OHSHIMA, TAKASHI; TOMIMATSU, SATOSHI; HASHIZUME, TOMIHIRO; ISHITANI, TOHRU
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 022105/0744 →