Image sensor module and method of manufacturing the same
An image sensor module includes a semiconductor chip. Photodiode units are disposed in an active region of the semiconductor chip to convert light into electric signals. Pads are disposed in a peripheral region formed around the active region and the pads are electrically connected to the photodiode units. A connecting region is formed around the peripheral region. Re-distribution layers are electrically connected to respective pads and extend to the connecting region. A transparent substrate covers the photodiode units and the pads and exposes at least a portion of the re-distribution layers. Connecting layers are electrically connected to the respective re-distribution layers and extend to a top surface of the transparent substrate. Connecting members are connected to the respective connecting layers disposed on the top surface of the transparent substrate.
1. An image sensor module, comprising:
a semiconductor chip comprising:
photodiode units disposed in an active region converting light into electric signals;
pads disposed in a peripheral region formed around the active region and electrically connected to the photodiode units; and
a connecting region formed around the peripheral region;
re-distribution layers electrically connected to the pads and extended to the connecting region;
a transparent substrate covering the photodiode units and the pads, wherein at least a portion of each of the re-distribution layers is exposed from the transparent substrate;
connecting layers electrically connected to the re-distribution layers and extended to a top surface of the transparent substrate; and
connecting members electrically connected to the connecting layers disposed on the top surface of the transparent substrate.
2. The image sensor module according to claim 1 , wherein each of the photodiode units comprises:
a photodiode converting light into electric signals;
a driving unit having a driving transistor driving the photodiode;
a color filter disposed over the photodiode; and
a condensing member disposed over the color filter.
3. The image sensor module according to claim 1 , wherein the transparent substrate includes any one of a transparent glass substrate, a transparent quartz substrate, and a transparent synthetic resin substrate.
4. The image sensor module according to claim 1 , wherein an angle made by the top surface of the transparent substrate and a side surface connected to the top surface of the transparent substrate is an obtuse angle.
5. The image sensor module according to claim 1 , further comprising a transparent adhesion member interposed between the transparent substrate and the semiconductor chip.
6. The image sensor module according to claim 1 , further comprising at least one lens unit disposed at a portion of the top surface of the transparent substrate corresponding to the active region.
7. The image sensor module according to claim 1 , further comprising a circuit substrate, the circuit substrate comprising:
a first opening exposing the active region; and
connecting pads disposed around the first opening wherein the connecting pads are electrically connected to a connecting member of the connecting members.
8. The image sensor module according to claim 7 , further comprising a holder surrounding the semiconductor chip and the circuit substrate, wherein the holder includes a second opening exposing the first opening of the circuit substrate.
9. The image sensor module according to claim 1 , wherein the transparent substrate comprises:
a first transparent substrate portion corresponding to the active region, the first transparent substrate portion having a first thickness; and
a second transparent substrate portion corresponding to the peripheral region, the second transparent substrate portion having a second thickness,
wherein the first thickness is greater than the second thickness.
10. An image sensor module, comprising:
a semiconductor chip comprising:
photodiode units disposed in an active region converting light into electric signals; and
pads disposed in a peripheral region formed around the active region and electrically connected to the photodiode units;
a transparent substrate comprising:
a first transparent substrate portion corresponding to the active region, the first transparent substrate portion having a first thickness;
a second transparent substrate portion corresponding to the peripheral region, the first transparent substrate portion having a first thickness, wherein the first thickness is greater than the second thickness;
a transparent substrate body covering the photodiode units and the pads and having through-holes exposing at least a portion of each of the pads;
through-electrodes electrically connected to the pads exposed through the through-holes; and
connection members connected to the through-electrodes, respectively.
11. The image sensor module according to claim 10 , wherein the transparent substrate includes any one of a transparent glass substrate, a transparent quartz substrate, and a transparent synthetic resin substrate.
12. The image sensor module according to claim 10 , further comprising a transparent adhesion member interposed between the transparent substrate and the semiconductor chip.
13. The image sensor module according to claim 10 , further comprising at least one lens unit disposed at a portion of a top surface of the transparent substrate corresponding to the active region.
14. The image sensor module according to claim 10 , further comprising a circuit substrate comprising:
a first opening exposing the active region; and
connecting pads disposed around the first opening, wherein the connecting pads are electrically connected to the connecting members.
15. The image sensor module according to claim 14 , further comprising a holder surrounding the semiconductor chip and the circuit substrate, wherein the holder includes a second opening exposing the first opening of the circuit substrate.