Semiconductor chip, method of fabricating the same and semiconductor chip stack package
View Patent ↗Provided are a semiconductor chip, a method of fabricating a semiconductor chip, and a semiconductor chip stack package. The semiconductor chip includes a semiconductor substrate and a semiconductor device on the semiconductor substrate. A dielectric covers the semiconductor device. A top metal is on the dielectric and electrically connected to the semiconductor device. A deep via penetrates the semiconductor substrate and the dielectric. An interconnection connects the deep via and the top metal electrically. A bump is in contact with the top metal and the interconnection.
1. A semiconductor chip comprising:
a semiconductor substrate;
a semiconductor device on the semiconductor substrate;
a dielectric covering the semiconductor device;
a top metal on the dielectric and electrically connected to the semiconductor device;
a deep via passing through the semiconductor substrate and the dielectric;
an interconnection electrically connecting the deep via and the top metal, wherein the interconnection directly contacts a first part of an upper surface of the top metal; and
a bump in contact with the top metal and the interconnection, wherein the bump directly contacts a second part of the upper surface of the top metal and an upper surface of the interconnection.
2. The semiconductor chip according to claim 1 , wherein the interconnection covers a top surface of the deep via and a portion of the top metal.
3. The semiconductor chip according to claim 1 , wherein the top metal, the bump, and the deep via comprise the same metal.
4. The semiconductor chip according to claim 3 , wherein the top metal, the bump, and the deep via comprise at least one of copper or tungsten.
5. The semiconductor chip according to claim 1 , wherein the interconnection comprises at least one of tantalum, titanium, tungsten, tantalum nitride, titanium nitride, tungsten nitride, or titanium silicon nitride.
6. A semiconductor chip stack package comprising:
a first semiconductor chip comprising a first semiconductor device on a first semiconductor substrate, a first top metal electrically connected to the first semiconductor device, and a first bump in contact with the first top metal; and
a second semiconductor chip on the first semiconductor chip and comprising a second semiconductor device on a second semiconductor substrate, a deep via passing through the second semiconductor substrate in contact with the first bump, a second top metal connected to the second semiconductor device, a second bump in contact with the second top metal, and an interconnection connecting the deep via and the second top metal, wherein (a) the interconnection directly contacts a first part of an upper surface of the second top metal, and (b) the second bump directly contacts a second part of the upper surface of the second top metal and an upper surface of the interconnection.
7. The semiconductor chip stack package according to claim 6 , further comprising a circuit substrate on the second semiconductor chip and in contact with the second bump.
8. The semiconductor chip stack package according to claim 6 , wherein the first top metal, the deep via, and the first bump comprise the same metal.
9. The semiconductor chip according to claim 1 , further comprising a passivation layer and a buffer layer in a pattern on the top metal, the insulating layer, and the interconnection such that at least a portion of the top metal is exposed.
10. The semiconductor chip according to claim 9 , wherein the deep via passes through the semiconductor substrate, the dielectric, the passivation layer, and the buffer layer.
11. The semiconductor chip according to claim 1 , wherein the deep via is surrounded by a barrier metal layer and a buffer layer.
12. The semiconductor chip according to claim 11 , wherein the barrier metal layer comprises tantalum, tantalum nitride, tantalum silicon nitride, titanium silicon nitride, or rubidium, and the buffer layer comprises silicon oxide, silicon nitride, or silicon oxynitride.
13. The semiconductor chip according to claim 1 , wherein the deep via has a width of from about 1 μm to about 100 μm and a length of from about 1 μm to about 300 μm.
14. The semiconductor chip according to claim 1 , wherein the bump protrudes from a top surface of the semiconductor chip.
15. The semiconductor chip stack package according to claim 6 , wherein the first bump and the deep via of the second semiconductor chip comprise the same metal.
16. The semiconductor chip stack package according to claim 6 , wherein the second top metal, the second bump, and the deep via comprise the same metal.
17. The semiconductor chip stack package according to claim 6 , wherein the first top metal, the second top metal, the first bump, the second bump, and the deep via comprise the same metal.
18. The semiconductor chip stack package according to claim 6 , further comprising a circuit on the second semiconductor chip, wherein the circuit comprises a conductive pad electrically connected to the second bump.
19. The semiconductor chip stack package according to claim 6 , further comprising a barrier metal layer and a buffer layer surrounding the deep via.
20. The semiconductor chip stack package according to claim 19 , wherein the barrier metal layer comprises tantalum, tantalum nitride, tantalum silicon nitride, titanium silicon nitride, or rubidium, and the buffer layer comprises silicon oxide, silicon nitride, or silicon oxynitride.