Forming isolation regions for integrated circuits
View Patent ↗A substrate may have active areas at different levels separated by a mask. Along the mask may be a shallow trench isolation. Along the shallow trench isolation may be a LOCOS isolation. The shape of a substrate transition region between the levels may be tunably controlled. The shallow trench isolation may reduce the bird's beak effect.
1. A method comprising:
forming a trench isolation in a substrate;
masking the substrate on one side of said trench isolation and exposing the substrate on the other side of said trench isolation all the way to said trench isolation;
oxidizing said exposed side of said substrate to form substrate regions on either side of said trench isolation that are at different vertical levels and are sufficiently planar to enable the formation of integrated circuit transistors; and
wherein oxidizing said exposed side of said substrate includes oxidizing to a depth greater than the depth of said trench isolation.
2. The method of claim 1 , wherein oxidizing said exposed side of said substrate includes providing said levels for the formation of periphery devices on one side and memory devices on the other side of said trench isolation.
3. The method of claim 1 wherein oxidizing said exposed side of said substrate includes oxidizing until the oxidation intersects the bottom of said trench isolation.