Capacitor of semiconductor device and method for forming the same

1. A method for forming a capacitor of a semiconductor device, the method comprising:

forming a cylindrical storage node over a semiconductor substrate;

depositing a first dielectric layer over the cylindrical storage node;

etching the first dielectric layer to reduce a thickness of a portion of the first dielectric layer on a protruded end of the cylindrical storage node;

depositing a second dielectric layer over the etched first dielectric layer, wherein the second dielectric layer supplements a thickness of a portion of the first dielectric layer on a bottom corner of the cylindrical storage node; and

forming a cell plate over the second dielectric layer.

2. The method of claim 1 further comprising etching until the thickness of the portion of the first dielectric layer on the protruded end of the cylindrical storage node becomes thinner than the thickness of the portion of the first dielectric layer on the bottom corner of the cylindrical storage node.

3. The method of claim 1 , wherein forming the cell plate comprises:

forming an adhesion layer comprising titanium zirconium nitride over the second dielectric layer; and

forming a ruthenium (Ru) layer over the adhesion layer.

4. A method for forming a capacitor of a semiconductor device, the method comprising:

forming a cylindrical storage node over a semiconductor substrate;

depositing a first dielectric layer over the cylindrical storage node;

etching the first dielectric layer to expose a surface of a protruded end of the cylindrical storage node;

depositing a second dielectric layer over the etched first dielectric layer and the protruded exposed surface of the end of the cylindrical storage node; and

forming a cell plate over the second dielectric layer.

5. The method of claim 4 , wherein the cylindrical node comprises a titanium nitride (TiN) layer formed by Sequential Flow Deposition (SFD).

6. The method of claim 4 , wherein the first and second dielectric layers are formed by depositing the same dielectric material.

7. The method of claim 4 , wherein the first and second dielectric layers comprise zirconium oxide (ZrO 2 ) layers deposited by Atomic Layer Deposition (ALD).

8. The method of claim 4 further comprising etching using nitrogen trifluoride (NF 3 ) or carbon tetrafluoride (CF 4 ) as an etchant.

9. The method of claim 4 further comprising etching so that a surface of an upper side wall of the cylindrical storage node is further exposed and a portion of the first dielectric layer remains on a bottom corner of the cylindrical storage node.

10. The method of claim 4 further comprising repeating the deposition and etching steps.

11. A method for forming a capacitor of a semiconductor device, the method comprising:

forming a cylindrical storage node over a semiconductor substrate;

depositing a first dielectric layer over the cylindrical storage node;

etching the first dielectric layer to reduce a thickness of a portion of the first dielectric layer on a protruded end of the cylindrical storage node;

depositing a second dielectric layer over the etched first dielectric layer, wherein the second dielectric layer supplements a thickness of a portion of the first dielectric layer on a bottom corner of the cylindrical storage node;

forming an adhesion layer comprising titanium zirconium nitride (TiZrN) over the second dielectric layer; and

forming a cell plate comprising a ruthenium (Ru) layer over the adhesion layer.

12. The method of claim 11 further comprising etching until the thickness of the portion of the first dielectric layer on the protruded end of the cylindrical storage node becomes thinner than the thickness of the portion of the first dielectric layer on the bottom corner of the cylindrical storage node.

13. The method of claim 11 further comprising etching so that a surface of the protruded end of the cylindrical storage node is exposed.

14. The method of claim 11 further comprising etching so that a surface of the protruded end of the cylindrical storage node and a surface of an upper side wall adjoining the protruded end are exposed and a portion of the first dielectric layer is remains on the bottom corner of the cylindrical storage node.

15. The method of claim 11 further comprising forming a titanium nitride (TiN) layer over the ruthenium layer.

16. A method for forming a capacitor of a semiconductor device, the method comprising:

forming a cylindrical storage node over a semiconductor substrate;

depositing a dielectric layer over the cylindrical storage node;

forming an adhesion layer comprising titanium zirconium nitride (TiZrN) over the dielectric layer; and

forming a cell plate comprising a ruthenium (Ru) layer over the adhesion layer.

17. The method of claim 16 , wherein the titanium zirconium nitride (TiZrN) is deposited to a thickness of about 20 Å to about 50 Å and the ruthenium layer is deposited to a thickness of about 200 Å to about 300 Å.

18. The method of claim 16 further comprising forming a titanium nitride (TiN) layer to a thickness of about 300 Å to about 500 Å over the ruthenium layer by Physical Vapor Deposition (PVD).

19. A capacitor of a semiconductor device comprising:

a cylindrical storage node formed over a semiconductor substrate;

a dielectric layer formed over the cylindrical storage node;

an adhesive layer formed comprising titanium zirconium nitride (TiZrN) over the dielectric layer; and

a cell plate comprising a ruthenium (Ru) layer over the adhesion layer.

20. The capacitor of a semiconductor device of claim 19 , wherein the dielectric layer consists of zirconium oxide (ZrO 2 ).