Wafer bonding method
View Patent ↗A method includes steps of providing first and second substrates, and forming a bonding interface between them using a conductive bonding region. A portion of the second substrate is removed to form a mesa structure. A vertically oriented semiconductor device is formed with the mesa structure. A portion of the conductive bonding region is removed to form a contact. The vertically oriented semiconductor device is carried by the contact.
1. A method, comprising:
providing an interconnect region;
providing a substrate which includes a stack of semiconductor material layers;
forming a bonding interface between the interconnect region and substrate using a conductive bonding region; and
processing the substrate to form a mesa structure.
2. The method of claim 1 , further including removing a portion of the conductive bonding region.
3. The method of claim 1 , wherein the mesa structure includes a portion of the stack of semiconductor material layers.
4. The method of claim 1 , further including forming a vertically oriented semiconductor device which includes a portion of the stack of semiconductor material layers.
5. The method of claim 1 , wherein the interconnect region includes a conductive line connected to the mesa structure through the bonding interface.