Antimony precursors for GST films in ALD/CVD processes
View Patent ↗The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Novel silylantimony compounds are also disclosed.
1. An ALD process for making a germanium-antimony-tellurium alloy film comprising the steps of:
a) introducing into a deposition chamber an aminogermane with the general formula:
where R 1 and R 2 are individually in chain, branch or cyclic alkyl groups with 1 to 10 carbons, to form a molecular layer of aminogermane on the surface of the substrate;
b) introducing into the deposition chamber a tellurium precursor selected from the group consisting of:
where R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independently hydrogen, alkyl groups having 1 to 10 carbons in linear, branched, or cyclic forms with or without double bonds, or aromatic groups, to react with the aminogermane layer to form a Te layer comprising Te-Ge bonds, wherein the Te comprises silyl substituents;
reacting the silyl substituents on the Te with an alcohol having the general formula of ROH, where R is an alkyl group with 1 to 10 carbon atoms in a linear, branched, or cyclic form, or an aromatic group, to form Te-H bonds;
d) introducing into the deposition chamber a silylantimony precursor selected from the group consisting of:
where R 2-10 are individually a hydrogen atom, an alkyl group or alkenyl group with 1 to 10 carbons as chain, branched, or cyclic, or an aromatic group; R 1 is individually a hydrogen atom, an alkyl group or alkenyl group with 2 to 10 carbons as chain, branched, or cyclic, or an aromatic group; R 11 and R 12 are individually an alkyl group or alkenyl group with 1 to 10 carbons as chain, branched, or cyclic, or an aromatic group, to form an Sb layer on top of the Te layer, wherein the Sb comprises silyl substituents; and
reacting the silyl substituents on the Sb with (i) water and/or (ii) an alcohol having the general formula of ROH, where R is an alkyl group with 1 to 10 carbon atoms in a linear, branched, or cyclic form, or an aromatic group, to form Sb-H bonds..
2. The process of claim 1 wherein the silylantimony precursor is tris(trimethylsilyl)antimony.
3. The process of claim 1 wherein the steps are repeated.
4. The process of claim 1 wherein the temperature of the deposition chamber is between from 100° C. to 400° C.
5. The process of claim 1 wherein the alcohol is methanol.
6. An ALD process for depositing a metalic antimony layer on a substrate, the process comprising the step of:
reacting a silylantimony precursor with water or an alcohol to form an antimony layer, wherein the silylantimony precursor is selected from the group consisting of:
where R 2-10 are individually a hydrogen atom, an alkyl group or alkenyl group with 1 to 10 carbons as chain, branched, or cyclic, or an aromatic group; R 1 is individually a hydrogen atom, an alkyl group or alkenyl group with 2 to 10 carbons as chain, branched, or cyclic, or an aromatic group; R 11 and R 12 are individually an alkyl group or alkenyl group with 1 to 10 carbons as chain, branched, or cyclic, or an aromatic group.
7. The process of claim 6 wherein the alcohol is an alcohol having the general formula of ROH, where R is an alkyl group with 1 to 10 carbon atoms in a linear, branched, or cyclic form, or an aromatic group.
8. The process of claim 7 wherein the alcohol is methanol.
9. The process of claim 6 wherein the temperature of the reaction is between from room temperature to 300° C.
10. An ALD process comprising the steps of:
introducing into a deposition chamber a tellurium precursor selected from the group consisting of:
where R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independently hydrogen, alkyl groups having 1 to 10 carbons in linear, branched, or cyclic forms with or without double bonds, or aromatic groups, to form a Te layer comprising silyl substituents on the Te;
reacting the silyl substituents on the Te with an alcohol having the general formula of ROH, where R is an alkyl group with 1 to 10 carbon atoms in a linear, branched, or cyclic form, or an aromatic group, to form Te-H bonds;
introducing into the deposition chamber a silylantimony precursor selected from the group consisting of:
where R 2-10 are individually a hydrogen atom, an alkyl group or alkenyl group with 1 to 10 carbons as chain, branched, or cyclic, or an aromatic group; R 1 is individually a hydrogen atom, an alkyl group or alkenyl group with 2 to 10 carbons as chain, branched, or cyclic, or an aromatic group; R 11 and R 12 are individually an alkyl group or alkenyl group with 1 to 10 carbons as chain, branched, or cyclic, or an aromatic group, to form an Sb layer on top of the Te layer, wherein the Sb comprises silyl substituents; and
reacting the substituents on the Sb with (i) water and/or (ii) an alcohol having the general formula of ROH, where R is an alkyl group with 1 to 10 carbon atoms in a linear, branched, or cyclic form, or an aromatic group, to form Sb-H bonds.
11. The process of claim 10 wherein the alcohol is methanol.
12. The process of claim 10 the temperature of the reaction is between from room temperature to 300° C.