Transistor providing different threshold voltages and method of fabrication thereof
A transistor includes a channel region with a first portion and a second portion. A length of the first portion is smaller than a length of the second portion. The first portion has a higher threshold voltage than the second portion. The lower threshold voltage of the second portion allows for an increased ON current. Despite the increase attained in the ON current, the higher threshold voltage of the first portion maintains or lowers a relatively low OFF current for the transistor.
1. A transistor, comprising:
a source region formed in a semiconductor substrate;
a drain region formed in the semiconductor substrate and spaced apart from the source region; and
a channel region formed in the semiconductor substrate between the source region and the drain region, the channel region having a first portion with a first depth and a second portion with a second depth different than the first depth, wherein the first portion has an amount of dopant at the first depth and the second portion has approximately the same amount of the dopant at the second depth such that the second portion has a different threshold voltage than the first portion.
2. The transistor of claim 1 , wherein the second portion provides a higher threshold voltage than the first portion.
3. The transistor of claim 1 , wherein the first portion has a first length and the second portion has a second length, the second length being smaller than the first length.
4. The transistor of claim 3 , wherein the second length is determined by an equation α×L and the first length is determined by an equation L−(α×L), where L is a length of the channel region and a is a fraction less than one.
5. The transistor of claim 1 , wherein the second portion is in closer proximity to the source region of the transistor than the first portion.
6. The transistor of claim 1 , wherein the second portion has a lesser depth than the first portion.
7. The transistor of claim 1 , wherein the channel region has a third portion, the third portion providing a different threshold voltage than the first portion.
8. The transistor of claim 7 , wherein the first portion separates the second portion from the third portion.
9. A transistor, comprising:
a source region formed in a semiconductor substrate;
a drain region formed in the semiconductor substrate and spaced apart from the source region; and
a channel region formed in the semiconductor substrate between the source region and the drain region, the channel region having a first portion with a first depth and a second portion with a second depth different than the first depth, wherein:
the first portion has an amount of dopant at the first depth and the second portion has approximately the same amount of the dopant at the second depth;
the second portion has a higher threshold voltage than the first portion; and
the second portion has a smaller length than the first portion.
10. The transistor of claim 9 , wherein the length of the second portion is determined by an equation α×L and the length of the first portion is determined by an equation L−(α×L), where L is a length of the channel region and a is a fraction less than one.
11. The transistor of claim 9 , wherein the second portion is in closer proximity to the source region of the transistor than the first portion.
12. The transistor of claim 9 , wherein the second portion has a lesser depth than the first portion.
13. The transistor of claim 9 , wherein the channel region has a third portion, the third portion providing a higher threshold voltage than the first portion.
14. The transistor of claim 13 , wherein the first portion separates the second portion from the third portion.
15. A transistor, comprising:
a source region formed in a semiconductor substrate;
a drain region formed in the semiconductor substrate and spaced apart from the source region; and
a channel region formed in the semiconductor substrate between the source region and the drain region, the channel region having a first portion with a first depth, a second portion with a second depth different than the first depth, and a third portion, wherein the first portion has an amount of dopant at the first depth and the second portion has approximately the same amount of the dopant at the second depth, and the first portion has a different threshold voltage than the second portion and the third portion.
16. The transistor of claim 15 , wherein the first portion separates the second portion from the third portion.
17. The transistor of claim 15 , wherein the first portion provides a lower threshold voltage than the second portion and the third portion.
18. The transistor of claim 15 , wherein:
the first portion has a first length;
the second portion has a second length;
the third portion has a third length; and
the second length and the third length are smaller than the first length.
19. The transistor of claim 15 , wherein the second portion has a lesser depth than the first portion.