Substrate processing apparatus, method of manufacturing semiconductor device, and ceiling insulating part

1. A substrate processing apparatus comprising:

a reaction vessel configured to process a substrate; and

a heating device,

wherein the heating device comprises:

at least one sidewall insulating part surrounding the reaction vessel;

a ceiling insulating part placed on the sidewall insulating part; and

a heating element installed at an inner side of the sidewall insulating part, and

wherein the ceiling insulating part is divided into a plurality of parts by a dividing line and comprises a plurality of stress relief grooves extending from a center of the ceiling insulating part to a circumference thereof, each of the plurality of stress relief grooves having a depth with respect to a bottom surface of the ceiling insulating part without penetrating the ceiling insulating part and without dividing the ceiling insulating part into the plurality of parts.

2. The substrate processing apparatus of claim 1 , wherein the plurality of the stress relief grooves have an angle equal to or smaller than 180 degrees therebetween.

3. The substrate processing apparatus of claim 1 , wherein the ceiling insulating part comprises an exhaust hole at a center part for exhausting an inside atmosphere of the heating device.

4. The substrate processing apparatus of claim 1 ,

wherein the ceiling insulating part at least comprises a lower layer and an upper layer, and

wherein each of the plurality of stress relief grooves comprises a slit disposed in the lower layer.