ATOMIC LAYER DEPOSITION APPARATUS
An atomic layer deposition apparatus includes: a metal source gas supply tube, disposed in a side of a wafer to extend over the entire surface of the wafer, and capable of being supplied with a source gas from a first end to a second end; and an active gas supply tube, disposed in a side of a wafer to extend over the entire surface of the wafer, and capable of being supplied with a source gas from a first end to a second end, wherein the active gas supply tube is provided with a plurality of gas blow openings for blowing the active gas that is active over the wafer, and wherein the gas blow openings are disposed with gradually reduced inter-opening distances as being further from the first end to the second end of the active gas supply tube.
1 . An atomic layer deposition apparatus, comprising:
a substrate pedestal on which a substrate to be processed is disposed;
a first gas feeding tube, disposed in a side of said substrate pedestal to extend over the entire surface of said substrate to be processed disposed on said substrate pedestal, and capable of being supplied with a source gas from one end to the other end; and
a second gas feeding tube, disposed in a side of said substrate pedestal to extend over the entire surface of said substrate to be processed disposed on said substrate pedestal, and capable of being supplied with an active gas from one end to the other end, said active gas being active with a layer of a deposited material of said source gas over said substrate to be processed,
wherein said second gas feeding tube is provided with a plurality of gas blow openings for blowing said active gas that is active with said substrate to be processed, and
wherein said plurality of gas blow openings are distributed at inter-opening distances that are gradually reduced as being further from said one end toward said the other end of said second gas feeding tube.
2 . The atomic layer deposition apparatus as set forth in claim 1 , wherein said active gas is selected from a group consisting of nitrogen (N 2 ), ammonia (NH 3 ), nitrogen monoxide (NO), nitrogen dioxide (NO 2 ), nitrous oxide (N 2 O) oxygen (O 2 ), ozone (O 3 ), a gaseous mixture thereof, or a gaseous mixture thereof with argon (Ar) or helium (He).
3 . The atomic layer deposition apparatus as set forth in claim 1 , wherein said active gas is a plasma-activated gas which is obtained by a plasma excitation of a gas selected from a group consisting of nitrogen (N 2 ), ammonia (NH 3 ), oxygen (O 2 ), hydrogen (H 2 ), a gaseous mixture thereof, or a gaseous mixture thereof with argon (Ar) or helium (He).
4 . The atomic layer deposition apparatus as set forth in claim 1 , wherein said first gas feeding tube is provided with a plurality of gas blow openings for blowing said source gas over said substrate to be processed, and wherein said plurality of gas blow openings are distributed from said one end to said another end of said first gas feeding tube at a constant inter-opening distance.
5 . The atomic layer deposition apparatus as set forth in claim 1 , wherein said first gas feeding tube is provided with a plurality of gas blow openings for blowing said source gas over said substrate to be processed, and wherein said plurality of gas blow openings are distributed at inter-opening distances that are gradually reduced as being further from said one end toward said another end of said first gas feeding tube
6 . The atomic layer deposition apparatus as set forth in claim 1 , wherein said source gas is an inorganic metal compound or an organometallic material
7 . The atomic layer deposition apparatus as set forth in claim 1 , wherein said source gas is firstly supplied on said substrate to deposit a source material on said substrate, and then said deposited layer of said source material is activated with said active gas.
8 . The atomic layer deposition apparatus as set forth in claim 1 , wherein said substrate pedestal is configured to hold said substrate without rotating said substrate.