Semiconductor device and manufacturing method thereof
View Patent ↗This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component 1 and a pad electrode 4 electrically connected with the device component 1 are formed on a semiconductor substrate 2 . A supporting member 7 is bonded to a surface of the semiconductor substrate 2 through an adhesive layer 6 . There is formed a through-hole 15 in the supporting member 7 penetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole 15 . A depressed portion 12 is formed in a partial region of the top surface of the supporting member 7 . Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion 12 . When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor device 50 in an upper layer to an inside of the depressed portion 12.
1. A semiconductor device comprising:
a semiconductor substrate comprising an electronic component formed on a top surface of the semiconductor substrate;
a supporting member having a bottom surface and a top surface and bonded to the semiconductor substrate;
an adhesive layer attaching the bottom surface of the supporting member to the top surface of the semiconductor substrate; and
an electrode disposed on the bottom surface of the supporting member and electrically connected with the electronic component,
wherein the supporting member comprises a depressed portion formed from the top surface of the supporting member.
2. The semiconductor device of claim 1 , wherein the supporting member has a through-hole penetrating through the supporting member, and the electrode is electrically connected with an electrode of another device through the through-hole.
3. The semiconductor device of claim 1 , further comprising a first conductive terminal electrically connected with the electrode and provided in the through-hole in the supporting member, wherein the first conductive terminal protrudes from the top surface of the supporting member through the through-hole.
4. The semiconductor device of claim 1 , further comprising a protection layer covering the semiconductor substrate and having an opening at the electrode, and a second conductive terminal electrically connected with the electrode through the opening in the protection layer.
5. The semiconductor device of claim 1 , further comprising a MEMS component or a filtering material disposed in the depressed portion of the supporting member.
6. The semiconductor device of claim 1 , wherein the adhesive layer is partially formed so as to form a cavity between the semiconductor substrate and the supporting member.
7. A semiconductor device comprising:
a semiconductor substrate comprising an electronic component formed on a top surface of the semiconductor substrate;
a supporting member having a bottom surface and a top surface and bonded to the semiconductor substrate;
an adhesive layer attaching the bottom surface of the supporting member to the top surface of the semiconductor substrate; and
an electrode disposed on the bottom surface of the supporting member and electrically connected with the electronic component;
wherein the supporting member has a first through-hole connecting the top and bottom surfaces of the supporting member and provided therein with a first conductive terminal electrically connected with the electrode and a second through-hole not provided with the first conductive terminal and configured to house all or a portion of another device.
8. The semiconductor device of claim 7 , further comprising a protection layer covering the semiconductor substrate and having an opening at the electrode, and a second conductive terminal electrically connected with the electrode through the opening in the protection layer.