Semiconductor device having variable parameter selection based on temperature and test method
View Patent ↗A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, a word line low voltage, or the like. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.
1. A semiconductor device, comprising:
a first temperature sensing circuit including a first temperature threshold value; and
a voltage generator providing an output voltage having a first potential at an output terminal in response to the first temperature sensing circuit having a first temperature indication signal indicating the temperature of the semiconductor device is less than the first temperature threshold value and providing the output voltage having a second potential at the output terminal in response to the first temperature sensing circuit having a first temperature indication signal indicating the temperature of the semiconductor device is greater than the first temperature threshold value.
2. The semiconductor device of claim 1 , wherein:
the semiconductor device is a semiconductor memory device and the voltage generator is a periphery voltage generator that provides the output voltage as a periphery power supply potential to peripheral circuits in the semiconductor memory device.
3. The semiconductor device of claim 1 , wherein:
the semiconductor device is a semiconductor memory device and the voltage generator is an array voltage generator that provides the output voltage as an array power supply potential to a memory array in the semiconductor memory device.
4. The semiconductor device of claim 1 , wherein:
the first temperature sensing circuit includes a first temperature hysteresis value.
5. The semiconductor device of claim 1 , further including:
a second temperature sensing circuit including a second temperature threshold value greater than the first temperature threshold value; and
the voltage generator providing the output voltage having a third potential at the output terminal in response to the second temperature sensing circuit having a second temperature indication signal indicating the temperature of the semiconductor device is greater than the second temperature threshold value.
6. The semiconductor device of claim 1 , wherein:
the first temperature threshold value is programmable.
7. The semiconductor device of claim 1 , wherein:
the semiconductor device is a dynamic random access memory device.
8. The semiconductor device of claim 1 , wherein:
the voltage generator is coupled to receive a reference voltage and provides the output voltage by multiplying the reference voltage by a multiplication factor.
9. The semiconductor device of claim 1 , wherein:
the voltage generator is coupled to receive an activation signal, the activation signal is at a first logic level when the semiconductor device is in an active mode of operation and at a second logic level when the semiconductor device is in a standby mode of operation.
10. The semiconductor device of claim 1 , wherein:
the voltage generator includes a variable resistor coupled to receive the first temperature indication signal.
11. The semiconductor device of claim 1 , wherein:
the first temperature sensing circuit and the voltage generator are coupled to receive a reference voltage.
12. The semiconductor device of claim 3 , further including:
a bit line reference voltage generator coupled to receive the array power supply potential.
13. The semiconductor device of claim 4 , wherein:
the first temperature hysteresis value is programmable.
14. The semiconductor device of claim 5 , wherein:
the third potential is greater than the second potential.
15. The semiconductor device of claim 8 , wherein:
the multiplication factor is determined in accordance with at least the first temperature indication signal.
16. The semiconductor device of claim 10 , further including:
a second temperature sensing circuit including a second temperature threshold value greater than the first temperature threshold value and providing a second temperature indication signal; and
the variable resistor includes
a control section coupled to receive the first and second temperature indication signals and providing at least one temperature range signal; and
a resistance section coupled to receive the at least one temperature range signal, the resistance section provides a resistance value in response to the at least one temperature range signal.
17. The semiconductor device of claim 11 , wherein:
the voltage generator provides the output voltage by multiplying the reference voltage by a multiplication factor.
18. The semiconductor device of claim 11 , wherein:
the reference voltage is an essentially temperature independent reference voltage.
19. The semiconductor memory device of claim 11 , wherein:
a band gap reference circuit coupled to provide the essentially reference voltage.
20. The semiconductor device of claim 18 , wherein:
the first temperature sensing circuit provides the first temperature indication signal by comparing the reference voltage with a temperature varying voltage.