Stripper for dry film removal

1. A photoresist stripper formulation for removing photoresist, etch residue or ash residue from a semiconductor device surface, consisting of

Hydroxylamine ranging from 2.5 to 5.0 wt %;

Water ranging from 5 to 10 wt %;

A solvent ranging from 40 to 70 wt % ,selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof;

A base ranging from 5 to 7.5 wt %, selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof;

A metal corrosion inhibitor ranging from 0.25 to 1.0 wt %, selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and

A bath life extending agent glycerine, ranging from 2.0 to 10 wt %.

2. The photoresist stripper formulation of claim 1 , consisting of

Hydroxylamine (50% aqueous solution) ranges from 5 to 10 wt %;

Water ranges from 5 to 10 wt %;

Dimethylsulfoxide ranges from 40 to 70 wt %;

Tetramethylammonium hydroxide (25% aqueous solution) ranges from 20 to 30 wt %;

Catechol ranges from 0.25 to 1.0 wt %; and,

Glycerine ranges from 2 to 10 wt %.

3. The photoresist stripper formulation of claim 2 , consisting of

Hydroxylamine (50% aqueous solution) 8.26 wt %;

Water 5.72 wt %;

Dimethylsulfoxide 57.18 wt %;

Tetramethylammonium hydroxide (25% aqueous solution) 22.87 wt %;

Catechol 0.57 wt % and

Glycerine 5.4 wt %.

4. A method for removing photoresist, etch residue or ash residue from a semiconductor device surface, comprising contacting the photoresist, etch residue or ash residue with a photoresist stripper formulation, consisting of

Hydroxylamine ranging from 2.5 to 5.0 wt %;

Water ranging from 5 to 10 wt %;;

A solvent ranging from 40 to 70 wt % ,selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof;

A base ranging from 5 to 7.5 wt %, selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof;

A metal corrosion inhibitor ranging from 0.25 to 1.0 wt %, selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and

A bath life extending agent glycerine, ranging from 2.0 to 10 wt %.

5. The method of Claim 4 wherein the photoresist stripper formulation consisting of Hydroxylamine (50% aqueous solution) ranges from 5 to 10 wt %;

Water ranges from 5 to 10 wt %;

Dimethylsulfoxide ranges from 40 to 70 wt %;

Tetramethylammonium hydroxide (25% aqueous solution) ranges from 20 to 30 wt %;

Catechol ranges from 0.25 to 1.0 wt %; and,

Glycerine ranges from 2 to 10 wt %.

6. The method of claim 5 wherein the photoresist stripper formulation consisting of

Hydroxylamine (50% aqueous solution) 8.26 wt %;

Water 5.72 wt %;

Dimethylsulfoxide 57.18 wt %;

Tetramethylammonium hydroxide (25% aqueous solution) 22.87 wt %;

Catechol 0.57 wt % and

Glycerine 5.4 wt %.

7. The method of claim 4 wherein the photoresist, etch residue or ash residue is contacted with the formulation at a temperature below 70° C.

8. The method of claim 7 wherein the temperature is 60° C.

9. The method of claim 4 wherein photoresist, etch residue or ash residue is contacted with the formulation for a time of less than 60 minutes.

10. The method of claim 9 wherein photoresist, etch residue or ash residue is contacted with the formulation for a time of no more than 30 minutes.