Forming low dielectric constant dielectric materials
View Patent ↗In some embodiments, a damascene structure may be formed with metal lines separated by a dielectric layer. Portions of the dielectric layer may be ion implanted with carbon and/or inert species to lower selectively the dielectric constant, while leaving the bulk of the dielectric layer unaffected by the implant. As a result, suitably low dielectric constants can be achieved in damascene dielectric layers with sufficient mechanical strength.
1. A method comprising:
forming a mask on a dielectric layer;
bombarding said dielectric layer with the mask in place;
removing said mask;
bombarding said dielectric layer after said mask was removed;
forming trenches in said bombarded dielectric layer at two points spaced away from where the mask was positioned; and
filling said trenches with a metal.
2. The method of claim 1 wherein bombarding includes ion implanting.
3. The method of claim 2 including ion implanting using carbon ions.
4. The method of claim 3 including bombarding said dielectric layer with an inert species.
5. The method of claim 4 including bombarding using at least one of argon or xenon.
6. The method of claim 1 , including forming a metal line in said trenches.
7. The method of claim 1 including bombarding inert species across the entire surface of said dielectric layer after removing said mask.
8. An apparatus comprising:
a substrate;
a dielectric layer over said substrate;
a pair of first regions of said dielectric layer including both first impurities and second impurities between said metal lines; and
a second region of said dielectric layer between said metal lines and between said first regions, said second region indicating said second impurities, but not said first impurities.
9. The apparatus of claim 8 wherein said dielectric layer is formed of a single dielectric material.
10. The apparatus of claim 8 wherein said dielectric material is a bombarded dielectric.
11. The apparatus of claim 8 wherein said second impurities include carbon impurities.
12. The apparatus of claim 11 wherein said first impurities include inert impurities.
13. The apparatus of claim 8 , said first region having a lower dielectric constant than said second region.
14. The apparatus of claim 8 wherein said first region being ion implanted.