Diode having high breakdown voltage and low on-resistance
View Patent ↗A Schottky or PN diode is formed where a first cathode portion is an N epitaxial layer that is relatively lightly doped. An N+ buried layer is formed beneath the cathode for conducting the cathode current to a cathode contact. A more highly doped N-well is formed, as a second cathode portion, in the epitaxial layer so that the complete cathode comprises the N-well surrounded by the more lightly doped first cathode portion. An anode covers the upper areas of the first and second cathode portions so both portions conduct current when the diode is forward biased. When the diode is reverse biased, the depletion region in the central N-well will be relatively shallow but substantially planar so will have a relatively high breakdown voltage. The weak link for breakdown voltage will be the curved edge of the deeper depletion region in the lightly doped first cathode portion under the outer edges of the anode. Therefore, the N-well lowers the on-resistance without lowering the breakdown voltage.
1. A diode comprising:
a first cathode portion in a semiconductor material, the first cathode portion having a first dopant concentration of an N type;
a second cathode portion in the semiconductor material surrounded by the first cathode portion, the second cathode portion having a second dopant concentration of the N type higher than the first dopant concentration, the first cathode portion forming an outer edge of the diode's cathode;
an N-type buried layer directly below the first cathode portion and the second cathode portion to conduct current through the first cathode portion and the second cathode portion, the N-type buried layer leading to a cathode contact; and
an anode formed over and contacting the first cathode portion and the second cathode portion, wherein, when the diode is forward biased, current flows between the anode and the buried layer through the first cathode portion and the second cathode portion, the second cathode portion lowering an on-resistance of the diode by being more highly doped than the first cathode portion.
2. The diode of claim 1 wherein, upon the diode being reverse biased, a depletion region forms in the first cathode portion and the second cathode portion such that the depletion region curves in the first cathode portion near an edge of the anode but is substantially planar in the second cathode portion.
3. The diode of claim 1 wherein the second dopant concentration is at least double the first dopant concentration.
4. The diode of claim 1 wherein the second dopant concentration is at least three times the first dopant concentration.
5. The diode of claim 1 wherein the first cathode portion is an N-type epitaxial layer, and the second cathode portion is an N-well formed in the epitaxial layer.
6. The diode of claim 1 wherein the diode is a Schottky diode, and the anode is a metal layer directly contacting a surface of the first cathode portion and the second cathode portion.
7. The diode of claim 1 wherein the diode is a PN diode, and the anode is a P-type region contacting an upper area of the first cathode portion and the second cathode portion.
8. The diode of claim 1 wherein the diode is a junction in a bipolar transistor.
9. The diode of claim 1 wherein the diode comprises a plurality of identical diodes connected in parallel, the diodes being separated by N+ sinker regions, extending to the N-type buried layer, separating the first cathode portion of one diode from the first cathode portion of an adjacent diode.
10. The diode of claim 1 wherein the second cathode portion directly contacts the N-type buried layer.
11. The diode of claim 1 wherein the diode is formed in a silicon wafer that includes CMOS transistors, the second cathode portion having the same second dopant concentration as N-wells form in the wafer used as body regions for P-channel MOSFETs so that the second cathode portion and the N-wells are formed at the same time.
12. A diode comprising:
a first anode portion in a semiconductor material, the first anode portion having a first dopant concentration of a P type;
a second anode portion in the semiconductor material surrounded by the first anode portion, the second anode portion having a second dopant concentration of the P type higher than the first dopant concentration, the first anode portion forming an outer edge of the diode's anode;
a P-type buried layer directly below the first anode portion and the second anode portion to conduct current through the first anode portion and the second anode portion, the P-type buried layer leading to an anode contact; and
an N-type cathode formed over and contacting the first anode portion and the second anode portion, wherein, when the diode is forward biased, current flows between the cathode and the buried layer through the first anode portion and the second anode portion, the second anode portion lowering an on-resistance of the diode by being more highly doped than the first anode portion.
13. The diode of claim 12 wherein, upon the diode being reverse biased, a depletion region forms in the first anode portion and the second anode portion such that the depletion region curves in the first anode portion near an edge of the cathode but is substantially planar in the second anode portion.
14. The diode of claim 12 wherein the second dopant concentration is at least double the first dopant concentration.
15. The diode of claim 12 wherein the second dopant concentration is at least three times the first dopant concentration.
16. The diode of claim 12 wherein the first anode portion is a P-type epitaxial layer, and the second anode portion is a P-well formed in the epitaxial layer.
17. The diode of claim 12 wherein the diode is a junction in a bipolar transistor.
18. The diode of claim 12 wherein the diode comprises a plurality of identical diodes connected in parallel, the diodes being separated by P+ sinker regions, extending to the P-type buried layer, separating the first anode portion of one diode from the first anode portion of an adjacent diode.
19. The diode of claim 12 wherein the second anode portion directly contacts the P-type buried layer.