VOLTAGE SWITCHABLE DIELECTRIC MATERIALS WITH LOW BAND GAP POLYMER BINDER OR COMPOSITE
A composition is provided that includes a polymer binder, and one or more classes of particle constituents. At least one class of particle constituents includes semiconductive particles that individually have a band gap that is no greater than 2 eV. As VSD material, the composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of said voltage that exceeds the characteristic voltage level.
1 . A composition of voltage switchable dielectric material comprising a polymer binder comprising a mixture of two or more types of polymers or copolymers, wherein an effective band gap of the polymer binder is less than 2 eV.
2 . The composition of claim 1 , wherein at least one type of polymer in the polymer binder has a band gap that is sufficiently low to enable the effective band gap of the polymer binder to be less than 2 eV.
3 . The composition of claim 1 , wherein at least another type of polymer in the polymer binder is epoxy.
4 . A composition comprising:
a polymer binder that has an effective band gap of less than 2 eV;
one or more classes of particle constituents, including a class of semiconductive particles that individually have a band gap that is less than 2 eV;
wherein said composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of said voltage that exceeds the characteristic voltage level.
5 . The composition of claim 4 , wherein the semiconductive particles are micron or nanometer in dimension.
6 . The composition of claim 4 , wherein the band gap of the individual semiconductive particles is substantially equal to or less than the band gap of the polymer binder.
7 . The composition of claim 4 , wherein the one or more classes of particle constituents include conductive particles.
8 . The composition of claim 4 , wherein the one or more classes of particle constituents include high aspect ratio particles other than the class of semiconductive particles with the band gap of less than 2 eV.
9 . The composition of claim 4 , wherein the semiconductive particles include or correspond to compound semiconductors of a class III-V, II-VI, III-VI, and I-III-VI.
10 . The composition of claim 9 , wherein the compound semiconductors are high aspect ratio particles.
11 . The composition of claim 9 , wherein the compound semiconductor includes at least some concentration of Quantum Dot particles.
12 . The composition of claim 9 , wherein the semiconductor includes at least some concentration of nano-sized crystalline silicon.
13 . The composition of claim 4 , wherein the polymer corresponds to epoxy or acrylate.
14 . The composition of claim 4 , wherein the polymer binder includes a blend of polymers that includes at least one polymer with band gap that is sufficiently low to enable the effective band gap of the blend to be less than 2 eV.
15 . A device comprising:
a protective layer of voltage switchable dielectric (VSD) material comprising:
a polymer binder;
a concentration of semiconductive particles dispersed in the polymer that individually have a band gap that is substantially equal to or less than a band gap of the polymer binder.
16 . The device of claim 15 , wherein the concentration of semiconductive particles are micron or nanometer in dimension.
17 . The device of claim 16 , wherein the VSD material further comprises, in addition to the concentration of semiconductive particles, a concentration of one or more classes of particles corresponding to conductive particles, higher band gap semiconductive particles, or high aspect ratio particles.
18 . The device of claim 15 , wherein the semiconductive particles with the band gap of less than 2 eV include or correspond to compound semiconductors of a class III-V, II-VI, III-VI, and I-III-VI.
19 . The device of claim 15 , wherein the semiconductor particles with the band gap of less than 2 eV includes at least some concentration of Quantum Dot particles.
20 . The device of claim 15 , wherein the semiconductor particles with the band gap of less than 2 eV includes at least some concentration of nanometer dimensioned crystalline silicon.