Rectifier with SiC bipolar junction transistor rectifying elements
View Patent ↗A rectifier circuit can include an input circuit and first and second silicon carbide (SiC) bipolar junction transistors (BJTs). The input circuit is configured to respond to an alternating current (AC) input signal by generating a first pair of opposite polarity AC signals and a second pair of opposite polarity AC signals. The first pair of AC signals has a greater voltage range than the second pair of AC signals. The first and second SiC BJTs each include an input terminal connected to receive a different one of the second pair of opposite polarity AC signals, a base terminal connected to receive a different one of the first pair of opposite polarity AC signals, and an output terminal connected to a rectified signal output node of the rectifier circuit. The input circuit is further configured to control the first and second SiC BJTs through the first and second pairs of opposite polarity AC signals to forward bias the first SiC BJT while reverse biasing the second SiC BJT during a first half cycle of the AC input signal and to reverse bias the second SiC BJT while forward biasing the second SiC BJT during a second half cycle of the AC input signal.
1. A rectifier circuit comprising:
a transformer that is connected to respond to an alternating current (AC) input signal by generating a first pair of opposite polarity AC signals and a second pair of opposite polarity AC signals, wherein the first pair of AC signals has a greater voltage range than the second pair of AC signals;
first and second bipolar junction transistors (BJTs) each including an input terminal connected to receive a different one of the second pair of opposite polarity AC signals, a base terminal connected to receive a different one of the first pair of opposite polarity AC signals, and an output terminal connected to a rectified signal output node of the rectifier circuit; and
a pulse width modulation circuit that is configured to control biasing of the first and second BJTs responsive to a duty cycle control signal to regulate a duty cycle between a first mode when the first BJT is forward biased and the second BJT is reverse biased and a second mode when the first BJT is reverse biased and the second BJT is forward biased.
2. The rectifier circuit of claim 1 , wherein:
the first and second BJT are SiC BJTs on a silicon carbide (SiC) substrate; and
the first and second pairs of opposite polarity AC signals from the transformer are configured to saturate the first SiC BJT while reverse biasing the second SiC BJT during a major portion of a first half cycle of the AC input signal, and to reverse bias the first SiC BJT while saturating the second SiC BJT during a major portion of a second half cycle of the AC input signal.
3. The rectifier circuit of claim 2 , wherein:
the first and second SiC BJT are NPN type transistors with collector terminals as the input terminals and emitter terminals as the output terminals.
4. The rectifier circuit of claim 3 , wherein:
the first and second pairs of opposite polarity AC signals generate base to emitter voltages on the first and second SiC BJTs within a range of −5V to +5V during cycles of the AC input signal.
5. The rectifier circuit of claim 1 , wherein:
the transformer has an input primary winding connected to receive the AC input signal and an output secondary winding with first and second pairs of tap nodes that respectively generate the first and second pairs of AC signals.
6. The rectifier circuit of claim 5 , wherein:
the output secondary winding of the transformer further comprises a center tap node that receives a returned rectified signal for the rectifier circuit.
7. The rectifier circuit of claim 6 , wherein:
the first pair of tap nodes of the output secondary winding are configured to generate the first pair of AC signals with about an equal voltage range relative to a voltage of the center tap node; and
the second pair of tap nodes of the output secondary winding are configured to generate the second pair of AC signals with about an equal voltage range relative to the voltage of the center tap node, wherein the voltage range of the second pair of tap nodes is smaller than the voltage range of the first pair of tap nodes.
8. The rectifier circuit of claim 1 , wherein:
the pulse width modulation circuit is further configured to control a bias voltage between the input terminal and the base terminal of each of the first and second BJTs in response to the duty cycle control signal.
9. The rectifier circuit of claim 1 , wherein:
the pulse width modulation circuit is further configured to control biasing of the first and second BJTs responsive to comparison of the first pair of AC signals to at least one threshold value.
10. A rectifier circuit comprising:
first and second silicon carbide (SiC) bipolar junction transistors (BJTs) on a SiC substrate, the first and second SiC BJTs each including an input terminal, a base terminal, and an output terminal;
a first transformer that is connected to respond to an alternating current (AC) input signal by generating a pair of opposite polarity AC signals, wherein the input terminals of the first and second SiC BJTs are connected to receive a different one of the opposite polarity AC signals from the first transformer;
a second transformer that is connected to respond to a signal from the output terminal of the first SiC BJT by generating a voltage across the base terminal and the input terminal of the first SiC BJT; and
a third transformer that is connected to respond to a signal from the output terminal of the second SiC BJT by generating a voltage across the base terminal and the input terminal of the second SiC BJT, wherein the output terminals of the first and second SiC BJTs are connected through the second and third transformers to a rectified signal output node of the rectifier circuit.
11. The rectifier circuit of claim 10 , wherein:
the first transformer includes an input primary winding connected to receive the AC input signal and an output secondary winding having a center tap node and a pair of output nodes that respectively generate the pair of opposite polarity AC signals relative to the center tap node.
12. The rectifier circuit of claim 10 , wherein:
the second transformer includes an input primary winding connected between the output terminal of the first SiC BJT and the rectified signal output node of the rectifier circuit, and an output secondary winding connected between the base terminal and the input terminal of the first SiC BJT; and
the third transformer includes an input primary winding connected between the output terminal of the second SiC BJT and the rectified signal output node of the rectifier circuit, and an output secondary winding connected between the base terminal and the input terminal of the second SiC BJT.
13. The rectifier circuit of claim 10 , wherein:
the first, second, and third transformers are configured to saturate the first SiC BJT while reverse biasing the second SiC BJT during a major portion of a first half cycle of the AC input signal, and to reverse bias the first SiC BJT while saturating the second SiC BJT during a major portion of a second half cycle of the AC input signal.
14. The rectifier circuit of claim 10 , wherein:
the first and second SiC BJT are NPN type transistors with collector terminals as the input terminals and emitter terminals as the output terminals.
15. The rectifier circuit of claim 14 , wherein:
the first, second, and third transformers are configured to generate base to emitter voltages on the first and second SiC BJTs within a range of −5V to +5V during cycles of the AC input signal.
16. The rectifier circuit of claim 10 , further comprising:
a pulse width modulation circuit that is configured to respond to a duty cycle control signal by regulating a duty cycle between a first mode when the first SiC BJT is forward biased and the second SiC BJT is reverse biased and a second mode when the first SiC BJT is reverse biased and the second SiC BJT is forward biased.
17. A rectifier circuit comprising:
first and second silicon carbide (SiC) bipolar junction transistors (BJTs) on a SiC substrate, the first and second SiC BJTs each including an input terminal, a base terminal, and an output terminal;
a first transformer that responds to an alternating current (AC) input signal by generating a first pair of opposite polarity AC signals and a second pair of opposite polarity AC signals, wherein the first pair of AC signals has a greater voltage range than the second pair of AC signals, wherein the input terminals of the first and second SiC BJTs are connected to receive a different one of the second pair of opposite polarity AC signals, and the base terminals of the first and second SiC BJTs are connected to receive a different one of the first pair of opposite polarity AC signals;
a second transformer that is connected to respond to a signal from the output terminal of the first SiC BJT by generating a voltage across the base terminal and the input terminal of the first SiC BJT; and
a third transformer that is connected to respond to a signal from the output terminal of the second SiC BJT by generating a voltage across the base terminal and the input terminal of the second SiC BJT, wherein the output terminals of the first and second SiC BJTs are connected through the second and third transformers to a rectified signal output node of the rectifier circuit.
18. The rectifier circuit of claim 17 , wherein:
the first transformer includes an input primary winding connected to receive the AC input signal and an output secondary winding having a center tap node and a pair of output nodes that respectively generate the pair of opposite polarity AC signals relative to the center tap node.
19. The rectifier circuit of claim 17 , wherein:
the second transformer includes an input primary winding connected between the output terminal of the first SiC BJT and the rectified signal output node of the rectifier circuit, and an output secondary winding connected between the base terminal and the input terminal of the first SiC BJT; and
the third transformer includes an input primary winding connected between the output terminal of the second SiC BJT and the rectified signal output node of the rectifier circuit, and an output secondary winding connected between the base terminal and the input terminal of the second SiC BJT.
20. The rectifier circuit of claim 17 , wherein:
the first, second, and third transformers are configured to saturate the first SiC BJT while reverse biasing the second SiC BJT during a major portion of a first half cycle of the AC input signal, and to reverse bias the first SiC BJT while saturating the second SiC BJT during a major portion of a second half cycle of the AC input signal.
21. The rectifier circuit of claim 17 , wherein:
the first and second SiC BJT are NPN type transistors with collector terminals as the input terminals and emitter terminals as the output terminals.