Method of manufacturing a miniaturized device

1. A lithographic method comprising:

adjusting a telecentricity of a projection exposure system based on a selected patterning structure to be imaged and based on telecentricity information obtained from an angular distribution of light intensity in an image plane of the projection exposure system;

disposing the selected patterning structure to be imaged in a region of an object plane of the projection exposure system;

disposing a substrate carrying a resist in a region of the image plane and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and

developing the exposed resist and processing the substrate with the developed resist.

2. The method according to claim 1 , further comprising:

illuminating the object plane with measuring light;

detecting, for each of a plurality of locations on the image plane, an angular distribution of an intensity of the measuring light traversing the image plane; and

determining the telecentricity information based on the detected angular distributions of the intensity of the measuring light.

3. The method according to claim 2 , wherein for each one of the plurality of locations, detecting the angular distributions of the intensity of the measuring light comprises supplying measuring light traversing the image plane at the one location to a position sensitive detector using a measuring optics, and detecting a spatial distribution of the intensity of the measuring light using the detector, wherein the detector is disposed in a plane which is, relative to the measuring optics, substantially a Fourier plane of the image plane.

4. The method according to claim 3 , further comprising, for each one of the plurality of locations, intercepting the measuring light traversing the image plane outside of the one location using a beam stop.

5. The method according to claim 4 , wherein the beam stop is disposed in the image plane.

6. The method according to claim 4 , wherein the beam stop is disposed in the object plane.

7. The method according to claim 2 , wherein detecting the plurality of angular distributions of the intensity of the measuring light comprises, for each one of the plurality of locations, intercepting measuring light traversing the image plane outside of the one location and detecting at least one of a spatial distribution of the intensity of the measuring light traversing the one location, and an angular distribution of the intensity of the measuring light traversing the one location.

8. The method according to claim 7 , wherein the intercepting is achieved by disposing a beam stop in the image plane.

9. The method according to claim 7 , wherein the intercepting is achieved by disposing a beam stop in the object plane.

10. The method according to claim 1 , further comprising adjusting the telecentricity of the projection exposure system based on an angular distribution of light traversing the selected patterning structure.

11. The method according to claim 1 , wherein adjusting the telecentricity of the projection exposure system comprises at least one of:

displacing an aperture stop relative to an optical axis of the projection exposure system;

adjusting a position of the substrate relative to the projection exposure system;

adjusting a position of the selected patterning structure to be imaged relative to the projection exposure system; and

adjusting a position of a first component of an illumination optical system generating the imaging light relative to a second component of the illumination optical system.

12. The method according to claim 1 , further comprising exposing a plurality of dies on the substrate while the selected patterning structure is disposed in the region of the object plane and while the telecentricity of the projection exposure system is maintained constant.

13. The method according to claim 1 , further comprising exposing a plurality of substrates while the selected patterning structure is disposed in the region of the object plane and while the telecentricity of the projection exposure system is maintained constant.

14. The method according to claim 2 , further comprising disposing a plurality of different selected patterning structures in the region of the object plane, and for each one of the plurality of different selected patterning structures, adjusting the telecentricity of the projection exposure system based on the one selected patterning structure and based on a common detected angular distribution of the intensity of the measuring light.

15. The method according to claim 1 , wherein the telecentricity information is determined at a manufacturing site of the projection exposure system.

16. The method according to claim 2 , wherein the angular distributions of the intensity of the measuring light are detected at a manufacturing site of the projection exposure system.

17. The method according to claim 2 , further comprising repeating the detection of the angular distributions of the intensity of the measuring light at a manufacturing site of the miniaturized device.

18. The method according to claim 1 , further comprising:

retrieving telecentricity information associated with the selected patterning structure to be imaged from a memory; and

adjusting the telecentricity of the projection exposure system based upon the retrieved telecentricity information associated with the selected patterning structure.

19. The method according to claim 18 , further comprising:

detecting an identifier that identifies the selected patterning structure; and

retrieving from the memory the telecentricity information associated with the selected patterning structure based on said identifier.

20. A projection exposure system comprising:

imaging optics for imaging a patterning structure disposed in a region of an object plane of the imaging optics onto a substrate disposed in a region of an image plane of the imaging optics;

an illuminating optics for illuminating the object plane with exposure light;

at least one actuator for displacing an optical element of the projection exposure system;

a memory configured to store telecentricity information for the imaging optics associated with multiple patterning structures; and

a controller configured to drive the at least one actuator to image a selected patterning structure based on stored telecentricity information associated with the selected patterning structure and based on telecentricity information obtained from an angular distribution of light intensity in the image plane.

21. The projection exposure system according to claim 20 , wherein the projection exposure system comprises a detector for detecting an identifier associated with the selected patterning structure, and wherein the controller is further configured to retrieve the stored telecentricity information based on a detection signal of the detector.

22. The projection exposure system according to claim 20 , wherein:

the illuminating optics are configured to illuminate the object plane with measuring light;

the projection exposure system further comprises a detecting system configured to detect, for each one of a plurality of locations on in the image plane, an angular distribution of an intensity of measuring light traversing the image plane at the one location; and

the controller is further configured to obtain telecentricity information from the detected angular distributions of the intensity of the measuring light and to store the telecentricity information in the memory.