Substrate stage of substrate processing apparatus and substrate processing apparatus
Provided is a substrate processing apparatus including a partitioned susceptor and configured to heat a substrate uniformly for improving process quality and yield. The substrate stage comprises a plurality of susceptor segments embedded with heating units, a substrate stage unit comprising the plurality of susceptor segments arranged in a flat configuration to define a substrate placement surface, and a uniform heating part mounted at the substrate placement surface.
1. A substrate stage comprising:
a plurality of annular sector-shaped susceptor segments, each of the plurality of annular sector-shaped susceptor segments being embedded with a heating unit; and
a substrate stage unit partitioned into the plurality of annular sector-shaped susceptor segments,
wherein the plurality of annular sector-shaped susceptor segments are arranged in a manner that upper surfaces of the plurality of annular sector-shaped susceptor segments define a substrate placement surface with gaps between the plurality of annular sector-shaped susceptor segments;
a uniform heating part mounted between the substrate placement surface and a substrate along each of the plurality of annular sector-shaped susceptor segments; and
a heat transfer part inserted in the gaps between the plurality of annular sector-shaped susceptor segments under the uniform heating part wherein the heat transfer part is configured to receive radiant heat from the heating unit and transfer heat to the uniform heating part.
2. The substrate stage of claim 1 , wherein a power input terminal of the heating unit is installed at an apical part of each of the plurality of annular sector-shaped susceptor segments.
3. The substrate stage of claim 1 , wherein a diameter of the uniform heating part is greater than that of a substrate placed on the uniform heating part.
4. The substrate stage of claim 3 , wherein a power input terminal of the heating unit is installed at an apical part of each of the plurality of annular sector-shaped susceptor segments.
5. The substrate stage of claim 1 , wherein a lower end of the heat transfer part is located between the heating unit and lower ends of the plurality of annular sector-shaped susceptor segments in a vertical direction.
6. The substrate stage of claim 5 , wherein a diameter of the uniform heating part is greater than that of a substrate placed on the uniform heating part.
7. The substrate stage of claim 6 , wherein a power input terminal of the heating unit is installed at an apical part of each of the plurality of annular sector-shaped susceptor segments.
8. The substrate stage of claim 5 , wherein a power input terminal of the heating unit is installed at an apical part of each of the plurality of annular sector-shaped susceptor segments.
9. The substrate stage of claim 1 , wherein a diameter of the uniform heating part is greater than that of a substrate placed on the uniform heating part.
10. The substrate stage of claim 9 , wherein a power input terminal of the heating unit is installed at an apical part of each of the plurality of annular sector-shaped susceptor segments.
11. The substrate stage of claim 1 , wherein the uniform heating part and the heat transfer part are made of a same material.
12. The substrate stage of claim 11 , wherein a power input terminal of the heating unit is installed at an apical part of each of the plurality of annular sector-shaped susceptor segments.
13. The substrate stage of claim 1 , wherein the heat transfer part has a flat-plate shape.
14. The substrate stage of claim 1 , further comprising a gap between the heat transfer part and sidewalls of the plurality of annular sector-shaped susceptor segments.
15. A substrate processing apparatus comprising:
a gas supply unit configured to supply process gas;
a plasma generating unit configured to generate plasma;
a process chamber configured to accommodate a substrate for processing the substrate using the plasma;
an exhaust unit configured to exhaust an atmosphere of the process chamber; and
a substrate stage installed at the process chamber for placing the substrate thereon,
wherein the substrate stage comprises:
a plurality of circular sector-shaped susceptor segments, each of the plurality of circular sector-shaped susceptor segments being embedded with a heating unit;
a substrate stage unit partitioned into the plurality of circular sector-shaped susceptor segments,
wherein the plurality of circular sector-shaped susceptor segments are arranged in a manner that upper surfaces of the plurality of circular sector-shaped susceptor segments define a substrate placement surface with gaps between the plurality of circular sector-shaped susceptor segments;
a uniform heating part mounted between the substrate placement surface and a substrate along each of the plurality of sector-shaped susceptor segments; and
a heat transfer part inserted in the gaps between the plurality of circular sector-shaped susceptor segments under the uniform heating part wherein the heat transfer part is configured to receive radiant heat from the heating unit and transfer heat to the uniform heating part.
16. The substrate stage of claim 1 , wherein the uniform heating part or the heat transfer part is made of silicon carbide (SiC).
17. A substrate processing apparatus comprising:
a gas supply unit configured to supply process gas;
a process chamber configured to process a substrate by heating the substrate;
an exhaust unit configured to exhaust an atmosphere of the process chamber; and
a substrate stage installed at the process chamber for placing the substrate thereon,
wherein the substrate stage comprises:
a plurality of sector-shaped susceptor segments, each of the plurality of sector-shaped susceptor segments being embedded with a heating unit;
a substrate stage unit partitioned into the plurality of sector-shaped susceptor segments,
wherein the plurality of sector-shaped susceptor segments are arranged in a manner that upper surfaces of the plurality of sector-shaped susceptor segments define a substrate placement surface with gaps between the plurality of sector-shaped susceptor segments;
a uniform heating part mounted between the substrate placement surface and a substrate along each of the plurality of sector-shaped susceptor segments; and
a heat transfer part inserted in the gaps between the plurality of sector-shaped susceptor segments under the uniform heating part wherein the heat transfer part is configured to receive radiant heat from the heating unit and transfer heat to the uniform heating part.