Stress adjustment in reactive sputtering
View Patent ↗In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.
1. A stress adjustment unit comprising—
a stress adjustment circuit having a first terminal connected to a first internal shield of a plurality of internal shields of a sputter chamber and a second terminal connected to a first sputter target of a plurality of sputter targets in a sputter chamber for sputtering a film, the plurality of sputter targets including at least the first sputter target and a second sputter target, the second sputter target being interposed between the first sputter target and the first internal shield, the first internal shield being proximate the second sputter target, wherein the stress adjustment circuit comprises at least one variable resistor for adjusting an intrinsic stress of the sputtered film.
2. A stress adjustment unit as in claim 1 wherein the stress adjustment circuit provides a path for a current flow between the first internal shield and the first sputter target.
3. A stress adjustment unit as in claim 1 wherein the stress adjustment circuit lowers an impedance between the first internal shield and the the inner target.
4. A stress adjustment unit as in claim 1 wherein a redistribution of the current flow between the first sputter target, the second sputter target and the first internal shield varies based on a resistance value of the variable resistor between the first internal shield and the first sputter target.
5. A stress adjustment unit as in claim 1 wherein the stress adjustment circuit further comprises a dc power supply.
6. A sputtering system comprising:
a sputter chamber supporting a substrate, the sputter chamber having a first internal shield of a plurality of internal shields, at least two sputter targets in the sputter chamber for sputtering a film onto the substrate, including an inner sputter target and an outer sputter target, the outer sputter target being interposed between the inner sputter target and the first internal shield, the first internal shield being proximate the outer sputter target;
an ac power supply having a first electrode and a second electrode, the first electrode connected to the inner sputter target and the second electrode connected to the outer sputter target;
a stress adjustment unit comprising a stress adjustment circuit having a first terminal connected to the first internal shield, and a second terminal connected to the inner sputter target,
wherein the stress adjustment circuit comprises at least one variable resistor for adjusting an intrinsic stress of the sputtered film.
7. A sputtering system as in claim 6 wherein the stress adjustment circuit provides a path for a current flow between the first internal shield and the inner sputter target.
8. A sputtering system as in claim 6 wherein the stress adjustment circuit lowers an impedance between the first internal shield and the inner sputter target.
9. A sputtering system as in claim 6 wherein the sputtering system further comprises a controller for controlling the value of the variable resistor.
10. A sputtering system as in claim 6 wherein the stress adjustment circuit comprises a dc power supply.
11. A stress adjustment unit as in claim 1 wherein the resistor value of the at least one variable resistor is less than 100 Q and greater than 3 Q.
12. A stress adjustment unit as in claim 1 wherein the sputter chamber further comprises a controller for controlling the value of the variable resistor.
13. A sputtering system as in claim 6 wherein the ac power supply has a frequency between 20 and 200 kHz.
14. A sputtering system as in claim 6 wherein the target is an Al target.