Stress adjustment in reactive sputtering
View Patent ↗In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.
1. A method for adjusting stress of a sputtered film on a substrate, the method comprising:
applying an ac power to at least two sputter targets, including an inner target and an outer target, from an ac power supply having a first terminal connected to the inner target and a second terminal connected to the outer target; and
adjusting a stress adjustment circuit to adjust a plasma impedance and allows to control stress in the sputtered film, the stress adjustment circuit having a first polarity connected to an internal shield and a second polarity connected to the first terminal, the stress adjustment circuit adjusting a current flow between the outer target and the inner target, wherein the inner target, the outer target and the internal shield have a coaxial relationship with the inner target located inside the outer target and the internal shield located outside and proximate the outer target such that the outer target is interposed between the inner target and the internal shield, wherein the stress adjustment circuit comprises selecting a resistance value from a plurality of resistance values of a variable resistor of the stress adjustment circuit.
2. A method as in claim 1 wherein adjusting the stress adjustment circuit adjusts a plasma impedance between the outer target and the internal shield.
3. A method as in claim 1 wherein adjusting the stress adjustment circuit compensates unequal impedances for discharge currents.
4. A method as in claim 1 wherein adjusting the stress adjustment circuit controls the distribution of discharge currents between the at least two targets and the internal shield during every other half cycle of an ac power cycle.
5. A method as in claim 1 wherein adjusting the stress adjustment circuit allows to control stress in the sputtered film during every other half of an ac power cycle.
6. A method as in claim 1 wherein the inner target and the outer target are a ring shaped targets and the internal shield is a ring shaped shield.
7. A method as in claim 1 , where the resistance value is in a range from 3 ohms to 100 ohms.
8. A method as in claim 1 wherein the stress adjustment circuit is connected between the internal shield and the inner target creating a path for discharge currents to flow from the outer target to the internal shield.
9. A method as in claim 1 wherein the stress adjustment circuit further comprises a controller that automatically selects the resistance value to produce a desired level of stress in the sputtered film.
10. A method as in claim 2 wherein adjusting the plasma impedance comprises providing a path for a current flow between the internal shield and the outer target during a half of an ac power cycle in which a voltage applied to the outer target is negative relative to the voltage applied to the inner target.
11. A method as in claim 2 wherein adjusting the plasma impedance comprises lowering the plasma impedance between the internal shield and the outer target wherein the adjusted plasma impedance reduces unequal impedances for discharge currents.