Multi-chip device and method for manufacturing the same
View Patent ↗A multi-chip device includes LED sensors for sensing light separated by a predetermined interval in a wafer, LEDs for emitting light formed over the wafer respectively corresponding to the LED sensors, a driving circuit formed between the LEDs over the wafer, an insulating film over the wafer, and trenches in the insulating film exposing the LEDs.
1. A method for manufacturing a multi-chip device, comprising:
forming LED sensors for sensing light separated by a predetermined interval in a wafer wherein the LED sensors are formed in an area in which the upper-surface of the wafer is etched to a predetermined depth;
forming LEDs for emitting light over the wafer respectively corresponding to the LED sensors;
forming a driving circuit over the wafer;
forming an insulating film over the wafer; and
forming trenches in the insulating film to expose the LEDs through a selective etching process,
wherein the light emitted by the LEDs is transmitted through the trenches to another wafer formed over the trenches,
wherein the driving circuit is not formed in the trenches.
2. The method according to claim 1 , further comprising etching the wafer to have a predetermined thickness.
3. The method according to claim 2 , wherein etching the wafer comprises performing a back-grinding etching process.
4. The method according to claim 1 , further comprising forming a passivation layer over the driving circuit.
5. The method according to claim 1 , wherein forming a driving circuit comprises:
forming CMOS gates between the LEDs over the wafer; and
forming a metal layer connected to the CMOS gates through a plurality of contact nodes over the CMOS gates.
6. A method for manufacturing a multi-chip device having a plurality of chips forming a stack structure, wherein the chips are formed by:
forming LED sensors for sensing light separated by a predetermined interval in a wafer wherein the LED sensors are formed in an area in which the upper-surface of the wafer is etched to a predetermined depth;
forming LEDs for emitting light over the wafer respectively corresponding to the LED sensors;
forming a driving circuit over the wafer;
forming an insulating film over the wafer; and
forming trenches exposing the LEDs through a selective etching process,
wherein the light emitted by the LEDs is transmitted through the trenches to another wafer formed over the trenches,
wherein the driving circuit is not formed in the trenches.
7. The method according to claim 6 , further comprising etching the wafer to have a predetermined thickness.
8. The method according to claim 7 , wherein etching the wafer comprises performing a back-grinding etching process.
9. The method according to claim 6 , further comprising forming a passivation layer over the driving circuit.
10. The method according to claim 6 , wherein forming the driving circuit comprises:
forming CMOS gates between the LED elements over the wafer; and
forming a metal layer connected to the CMOS gate through a plurality of contact nodes over the CMOS gates.