IP Library Granted Patent US 7,977,717
Granted Patent B1
US 7,977,717 · App. 12/413,557 · Granted Jul 12, 2011

Pixel sensing circuit

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Quick Facts
Patent No.
US 7,977,717
App. No.
12/413,557
Granted
Jul 12, 2011
Kind
B1
Abstract

Systems and methods of pixel sensing circuits. In accordance with a first embodiment of the present invention, a pixel sensing circuit includes a floating diffusion functionally coupled to and surrounded by a ring transfer gate. The ring transfer gate is functionally coupled to and surrounded by a photo diode. The photo diode may be surrounded by a region of poly silicon. The disclosed structure provides radiation hardening and low light performance.

Claims (33)

1. A pixel sensing circuit comprising:

a photo diode;

a charge storage element functionally coupled to and surrounded by said photo diode;

a transfer gate transistor configured to couple the charge storage element to the photo diode; and

a poly silicon structure surrounding said transfer gate transistor.

2. The pixel sensing circuit of claim 1 wherein said charge storage element comprises a floating diffusion.

3. The pixel sensing circuit of claim 2 wherein said transfer gate transistor comprises said floating diffusion.

4. The pixel sensing circuit of claim 3 wherein said floating diffusion is surrounded by said transfer gate transistor, and said transfer gate transistor is surrounded by said photo diode.

5. The pixel sensing circuit of claim 4 wherein said transfer gate transistor comprises an enclosed geometry MOSFET.

6. The pixel sensing circuit of claim 5 wherein said transfer gate transistor comprises a ring transistor structure.

7. The pixel sensing circuit of claim 1 further comprising a source follower transistor functionally coupled to said charge storage element.

8. The pixel sensing circuit of claim 1 further comprising a reset transistor functionally coupled to said charge storage element.

9. A pixel sensing circuit comprising:

a photo diode;

a transfer gate transistor functionally coupled to and surrounded by said photo diode;

a charge storage element functionally coupled to and surrounded by said photo diode; and

a select transistor functionally coupled to said charge storage element for selecting an output of said pixel sensing circuit onto a column line, wherein said column line is coupled to at least one other substantially similar pixel sensing circuit.

10. The pixel sensing circuit of claim 9 wherein said transfer gate transistor comprises an enclosed geometry MOSFET.

11. The pixel sensing circuit of claim 10 wherein said transfer gate transistor comprises a ring transistor structure.

12. The pixel sensing circuit of claim 9 wherein said transfer gate transistor has about the same center as said photo diode.

13. The pixel sensing circuit of claim 9 wherein said photo diode is of a shape of a regular or irregular polygon of at least three sides.

14. A pixel sensing circuit comprising:

a transfer gate transistor,

a poly silicon structure surrounding said transfer gate transistor; and

a floating diffusion functionally coupled to and surrounded by said transfer gate transistor.

15. The pixel sensing circuit of claim 14 wherein said transfer gate transistor has substantially the same center as said floating diffusion.

16. The pixel sensing circuit of claim 14 wherein said transfer gate transistor comprises a complementary metal oxide semiconductor (CMOS) ring transistor structure.

17. The pixel sensing circuit of claim 14 wherein said floating diffusion and said transfer gate transistor comprise different shapes.

18. The pixel sensing circuit of claim 14 wherein:

said floating diffusion is surrounded by said transfer gate transistor;

said transfer gate transistor is surrounded by a photo diode;

said photo diode is functionally coupled to said transfer gate transistor; and

said photo diode is surrounded by said poly silicon structure.

Assignments (2)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →