Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer disposed above and in contact with the bottom electrode, and (3) a top electrode disposed above and in contact with the resistivity-switchable layer; wherein the resistivity-switchable layer includes a carbon-based material and a dielectric filler material. Numerous additional aspects are provided.
1. A method of forming a microelectronic structure, the method comprising:
forming a resistivity-switchable layer on a bottom electrode; and
forming a top electrode above and in contact with the resistivity-switchable layer;
wherein the resistivity-switchable layer comprises a carbon-based material and a dielectric filler material, wherein the carbon-based material comprises carbon nanotubes.
2. The method of claim 1 , wherein the dielectric filler material comprises colloidal nanoparticles.
3. The method of claim 1 , wherein the dielectric filler material comprises a high thermal conductivity dielectric material having a coefficient of thermal conductivity of at least 15 W/mK.
4. The method of claim 1 , wherein the resistivity-switchable layer has a reduced thermal resistance of less than 2e7 K/W.
5. The method of claim 1 , wherein forming the resistivity-switchable layer comprises spinning a heterogeneous dispersion onto a substrate to create a thin film.
6. The method of claim 1 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon nitride.
7. The method of claim 1 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon oxynitride.
8. The method of claim 1 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric aluminum oxide.
9. The method of claim 1 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon dioxide, tantalum oxide, or boron carbon nitride.
10. The method of claim 1 , wherein the top electrode does not penetrate through the resistivity-switchable layer.
11. The method of claim 1 , wherein the resistivity-switchable layer has a thickness of at most 300 angstroms.
12. The method of claim 1 , wherein the bottom electrode, the resistivity-switchable layer, and the top electrode comprise a metal-insulator-metal (MIM) stack comprising a memory cell.
13. A microelectronic structure comprising:
a bottom electrode;
a resistivity-switchable layer disposed above and in contact with the bottom electrode; and
a top electrode disposed above and in contact with the resistivity-switchable layer;
wherein the resistivity-switchable layer comprises a carbon-based material and a dielectric filler material, wherein the carbon-based material comprises carbon nanotubes.
14. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises colloidal nanoparticles.
15. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises a high thermal conductivity dielectric material having a coefficient of thermal conductivity of at least 15 W/mK.
16. The microelectronic structure of claim 13 , wherein the resistivity-switchable layer has a reduced thermal resistance of less than 2e7 K/W.
17. The microelectronic structure of claim 13 , wherein forming the resistivity-switchable layer comprises a thin film of a heterogeneous dispersion.
18. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon nitride.
19. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon oxynitride.
20. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric aluminum oxide.
21. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon dioxide, tantalum oxide, or boron carbon nitride.
22. The microelectronic structure of claim 13 , wherein the top electrode does not penetrate through the resistivity-switchable layer.
23. The microelectronic structure of claim 13 , wherein the resistivity-switchable layer has a thickness of at most 300 angstroms.
24. The microelectronic structure of claim 13 , wherein the bottom electrode, the resistivity-switchable layer, and the top electrode comprise a metal-insulator-metal (MIM) stack comprising a memory cell.