Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
View Patent ↗A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
1. A chemical-mechanical planarization composition comprising: A) an abrasive; B) about 0.1% to about 8% by weight of a per-type oxidizing compound; C) benzenesulfonic acid and/or a salt thereof; D) a corrosion inhibitor; and (E) water; wherein the composition has a pH ranging from about 5 to 11, and wherein the composition is substantially free of an amino acid having two or more nitrogen atoms,
wherein said corrosion inhibitor is selected from the group consisting of 1,2,4-triazole, benzotriazole, 6-tolylytriazole, tolyltriazole derivatives, 1-(2,3-dicarboxypropyl)benzotriazole, branched-alkylphenolsubstituted-benzotriazoles, N-acyl-N-hydrocarbonoxylalkyl aspartic acid, and mixtures thereof.
2. The composition of claim 1 , further comprising a surfactant selected from the group consisting of nonionic, anionic, cationic, amphoteric and mixtures thereof.
3. The composition of claim 2 , wherein said surfactant is present in a concentration from about 0.0001% by weight to about 1.5% by weight.
4. The composition of claim 1 , wherein said corrosion inhibitor is present in a concentration from about 1 ppm to about 7000 ppm.
5. The composition of claim 1 further comprising a carboxylic acid.
6. The composition of claim 1 further comprising a chelating agent, wherein said chelating agent is selected from the group consisting of ethylenediaminetetraacetic acid, N-hydroxyethylethylenediaminetriacetic acid, nitrilotriacetic acid, diethyleneenetriaminepentacetic acid, ethanoldiglycinate, glycine, tricine, citric acid, 2,3-butanedione dioxime, and mixtures thereof.
7. The composition of claim 6 , wherein said chelating agent is present in an amount from about 0.1% by weight to about 2% by weight.
8. The composition of claim 1 , further comprising one or more of: a) a base selected from non-polymeric nitrogen containing compounds; and b) an acid that is not sulfonic acid.
9. The composition of claim 8 , wherein said non-polymeric nitrogen containing compounds are selected from the group consisting of ammonium hydroxide, monoethanolamine, diethanolamine, triethanolamine, diethyleneglycolamine, N-hydroxyethylpiperazine, and mixtures thereof.
10. The composition of claim 1 , further comprising one or more of a) hydroxylamine; and b) an alkyl-substituted hydroxylamine or salt thereof.
11. The composition of claim 10 , wherein the hydroxylamine or the alkyl-substituted hydroxylamine or a salt thereof is present in an amount from about 0.01% by weight to about 0.1% by weight.
12. The composition of claim 1 further comprising a salt, wherein said salt is selected from the group consisting of ammonium persulfate, potassium persulfate, potassium sulfite, potassium carbonate, ammonium nitrate, potassium hydrogen phthalate, hydroxylamine sulfate, and mixtures thereof; and wherein the salt is present in an amount from about 0.02% by weight to about 5% by weight.
13. The composition of claim 1 , wherein the abrasive is colloidal silica or surface-modified colloidal silica.
14. The composition of claim 13 , wherein the colloidal silica or surface modified colloidal silica is present in an amount from about 0.001% by weight to about 30% by weight.
15. The composition of claim 1 , wherein the benzenesulfonic acid is present in an amount from about 0.5% by weight to about 4% by weight.