Chemical mechanical polishing of silicon carbide comprising surfaces
Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness <6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.
1. A slurry composition, comprising:
an aqueous liquid carrier;
an oxidizing agent comprising a first transition metal compound including a first transition metal that is soluble in said aqueous liquid carrier;
a second transition metal compound including chlorine in said slurry other than said first transition metal compound that is insoluble in said aqueous liquid carrier (insoluble second transition meta compound);
a plurality of core particles having a soft surface portion comprising a transition metal compound layer that provides a Mohs hardness <6 including said insoluble second transition metal compound and another insoluble transition metal compound;
wherein said slurry includes particles in addition to said plurality of core particles comprising at least one of said first transition metal compound and said insoluble second transition metal compound.
2. The slurry of claim 1 , wherein said first transition metal compound comprises KMnO 4 .
3. The slurry of claim 1 , wherein said another insoluble transition metal compound comprises MnO 2 , said insoluble second transition metal compound comprises and MnCl 3 , and said oxidizing agent comprising said first transition metal compound comprises potassium permanganate.
4. The slurry of claim 1 , wherein said oxidizing agent includes at least one of a peroxide, ammonium cerium nitrate, a persulfate, a chromate, a permanganate, and a perruthenate.
5. The slurry of claim 1 , wherein a concentration of said oxidizing agent is 0.1 M to 0.4 M.
6. The slurry of claim 1 , wherein a pH of said slurry is <4.
7. The slurry of claim 1 , wherein said oxidizing agent and said insoluble second transition metal compound both comprise Mn.