Semiconductor memory device and delay locked loop control method thereof
View Patent ↗A semiconductor memory device includes a mode control circuit configured to output a DLL on signal which is periodically activated during a specific mode; and a DLL circuit configured to delay and lock a clock to generate a DLL clock, and to be periodically turned on in response to the DLL on signal during the start of the specific mode.
1. A semiconductor memory device, comprising:
a mode control circuit configured to output a delay locked loop (DLL)-on signal which is periodically activated in response to an activation of a test mode signal during a specific mode; and
a DLL circuit configured to delay and lock a clock to generate a DLL clock and further configured to be periodically turned on in response to the DLL-on signal during the start of the specific mode.
2. The semiconductor memory device of claim 1 , wherein the specific mode is entered when a clock enable signal is deactivated.
3. The semiconductor memory device of claim 2 , wherein the specific mode is a power down mode.
4. The semiconductor memory device of claim 1 , wherein the mode control circuit is configured to output the DLL-on signal which is activated in synchronization with a period of the clock.
5. The semiconductor memory device of claim 4 , wherein the mode control circuit is configured to divide the clock and count a divided clock to output the DLL-on signal activated in accordance with a signal outputted as a result of the count.
6. The semiconductor memory device of claim 4 , wherein the clock is the external clock or an internal clock synchronized with the external clock.
7. A semiconductor memory device, comprising:
a division circuit configured to divide an input clock to output a divided clock during a specific mode;
an oscillation circuit configured to count the divided clock to output an oscillation signal;
a control circuit configured to output a delay locked loop (DLL)-on signal in response to the oscillation signal and an activation of a test mode signal; and
a DLL circuit configured to delay and lock an external clock to generate a DLL clock, and to be turned on in response to the DLL-on signal during the start of the specific mode.
8. The semiconductor memory device of claim 7 , wherein the specific mode is entered when a clock enable signal is deactivated.
9. The semiconductor memory device of claim 8 , wherein the specific mode is a power down mode.
10. The semiconductor memory device of claim 7 , wherein the division circuit includes:
a first division unit configured to divide the clock; and
a plurality of second division units coupled to the first division unit in series,
wherein each of the second division units is configured to divide a division clock outputted from a previous division unit and output a further divided clock.
11. The semiconductor memory device of claim 7 , wherein the division circuit is turned on in response to a signal for controlling the start of the specific mode, and is turned off in response to a signal for controlling turn-off of the DLL circuit.
12. The semiconductor memory device of claim 11 , wherein the signal for controlling the turn-off of the DLL circuit is a signal which is generated in an extension mode register set.
13. The semiconductor memory device of claim 7 , wherein the oscillation circuit includes a plurality of flip-flop units connected in series to count the divided clock, wherein the oscillation signal is outputted from a last one of the flip-flop units.
14. The semiconductor memory device of claim 13 , wherein each of the flip-flop units is configured to output an output signal corresponding to a signal state having a phase opposite to a phase of the oscillation signal or an output state of a previous flip-flop unit in synchronization with an edge of the divided clock.
15. The semiconductor memory device of claim 13 , wherein the flip-flop units are configured to be reset in response to a signal for controlling the start of the specific mode.
16. The semiconductor memory device of claim 7 , wherein the control circuit is configured to select one of the oscillation signal and a signal for controlling the start of the specific mode in response to the test mode signal, and output the DLL-on signal corresponding to the selected signal state.
17. A method for controlling a delay locked loop (DLL), comprising:
dividing a clock to output a divided clock during a specific mode where a DLL circuit is maintained in a turn-off state;
counting the divided clock to output an oscillation signal; and
outputting, in response to an activation of a test mode signal, a DLL on signal which is periodically activated in synchronization with the divided clock by using the oscillation signal,
wherein the DLL circuit is periodically turned on by the DLL-on signal during the specific mode.
18. The method of claim 17 , wherein the specific mode is entered when a clock enable signal is deactivated.
19. The method of claim 18 , wherein the specific mode is a power down mode.
20. The method of claim 17 , wherein the clock is an external clock or an internal clock synchronized with the external clock.
21. A semiconductor memory device, comprising:
an oscillation signal generating circuit configured to divide an input clock to output an oscillation signal;
a control circuit configured to output a delay locked loop (DLL)-on signal in response to the oscillation signal and an activation of a test mode signal; and
a DLL circuit configured to delay and lock an external clock to generate a DLL clock, and to be turned on in response to the DLL-on signal during the start of the specific mode.
22. The semiconductor memory device of claim 21 , wherein the oscillation signal generating circuit includes:
a first division unit configured to divide the clock; and
a plurality of second division units coupled to the first division unit in series,
wherein each of the second division units is configured to divide a division clock outputted from a previous division unit, and output the divided clock.
23. The semiconductor memory device of claim 21 , wherein the oscillation signal generating circuit is configured to be turned on in response to a signal for controlling the start of the specific mode, and turned off in response to a signal for controlling turn-off of the DLL circuit.
24. The semiconductor memory device of claim 21 , wherein the control circuit is configured to select one of the oscillation signal and a signal for controlling the start of the specific mode in response to the test mode signal, and output the DLL-on signal corresponding to the selected signal state.