Methods of forming pluralities of capacitors

1. A method of forming a plurality of capacitors, comprising:

providing a plurality of capacitor electrodes within a capacitor array area over a substrate, the capacitor electrodes comprising outer lateral sidewalls, individual of the capacitor electrodes comprising a container shape;

forming a retaining structure which engages the outer lateral sidewalls of the capacitor electrodes, the retaining structure being formed at least in part by etching a layer of insulative material which is not masked anywhere within the capacitor array area to form said retaining structure; and further comprising after forming the retaining structure, etching the retaining structure to reduce its size; the etched retaining structure at least in part supporting the plurality of capacitor electrodes; and

incorporating the plurality of capacitor electrodes into a plurality of capacitors, the retaining structure remaining as part of a finished integrated circuitry construction incorporating the plurality of capacitors.

2. The method of claim 1 wherein said etching of the layer of insulative material occurs prior to formation of the plurality of capacitor electrodes.

3. The method of claim 1 wherein said etching of the layer of insulative material occurs after formation of the plurality of capacitor electrodes.

4. The method of claim 1 comprising a circuitry area peripheral to the capacitor array area, said layer of insulative material extending to over the peripheral area during said etching of the layer of material and being at least partially masked in said peripheral area during said etching of the layer of material.

5. The method of claim 1 wherein said layer of insulative material is not masked anywhere on the substrate during said etching of the layer of material.

6. A method of forming a plurality of capacitors, comprising:

forming different composition first, second and third materials over a capacitor electrode-forming material; said first, second and third materials being received at least in part at some common elevation over the capacitor electrode-forming material; the second material being electrically insulative and comprising an anisotropically etched retaining structure;

etching the first material substantially selectively relative to the second and third materials followed by etching the capacitor electrode-forming material substantially selectively relative to the second and third materials effective to form a plurality of capacitor electrode openings;

forming individual capacitor electrodes within individual of the capacitor electrode openings, individual of the capacitor electrodes comprising a container shape;

etching the third material substantially selectively relative to the second material and substantially selectively relative to the capacitor electrodes effective to expose capacitor electrode-forming material underlying said third material being etched, followed by etching said capacitor electrode-forming material substantially selectively relative to the second material and substantially selectively relative to the capacitor electrodes effective to expose outer lateral sidewalls of the capacitor electrodes and leave at least some of the retaining structure supporting the capacitor electrodes; and

incorporating the plurality of capacitor electrodes into a plurality of capacitors, the retaining structure remaining as part of a finished integrated circuitry construction incorporating the plurality of capacitors.

7. The method of claim 6 wherein the first material is different in composition from that of the capacitor electrode-forming material.

8. The method of claim 6 wherein the first material is of the same composition as that of the capacitor electrode-forming material.

9. The method of claim 6 wherein the capacitor electrode-forming material comprises at least two layers, one of the two layers comprising an etch stop layer received proximate the first, second, and third materials.

10. The method of claim 6 wherein the first material is formed prior the second material and the second material is formed prior to the third material, and further comprising facet etching the retaining structure prior to forming the third material.

11. The method of claim 6 wherein the first material is formed prior the second material and the second material is formed prior to the third material, and further comprising wet etching the retaining structure prior to forming the third material.

12. A method of forming a plurality of capacitors, comprising:

forming a plurality of spaced masking blocks over a capacitor electrode-forming material, the masking blocks defining respective capacitor electrode opening outlines;

forming an interconnected insulative retaining structure over the capacitor electrode-forming material and against sidewalls of the masking blocks;

etching the masking blocks and then the capacitor electrode-forming material thereunder to form capacitor electrode openings within the capacitor electrode-forming material;

forming individual container-shaped capacitor electrodes within individual of the capacitor electrode openings and against the interconnected retaining structure, the capacitor electrodes comprising outer lateral sidewalls;

etching at least some of the capacitor electrode-forming material to expose at least some of said outer lateral sidewalls of the capacitor electrodes; and

after exposing outer lateral sidewalls of the capacitor electrodes, depositing capacitor dielectric material and capacitor electrode material over the retaining structure over at least some of said outer lateral sidewalls.

13. The method of claim 12 wherein the masking blocks are of a different composition from that of the capacitor electrode-forming material.

14. The method of claim 12 wherein the masking blocks are of the same composition as that of the capacitor electrode-forming material.

15. A method of forming a plurality of capacitors, comprising:

providing a plurality of capacitor electrodes within a capacitor array area over a substrate, the capacitor electrodes comprising outer lateral sidewalls;

supporting the plurality of capacitor electrodes at least in part with a retaining structure which engages the outer lateral sidewalls, the retaining structure being formed prior to forming the plurality of capacitor electrodes, the retaining structure at least prior to forming the plurality of capacitor electrodes having a plurality of openings formed there-through, individual of the openings being received between diagonally adjacent of the capacitor electrodes to be formed; and

incorporating the plurality of capacitor electrodes into a plurality of capacitors.

16. A method of forming a plurality of capacitors, comprising:

providing a plurality of capacitor electrodes within a capacitor array area over a substrate, the capacitor electrodes comprising outer lateral sidewalls;

supporting the plurality of capacitor electrodes at least in part with a retaining structure which engages the outer lateral sidewalls, the retaining structure being formed prior to forming the plurality of capacitor electrodes, the retaining structure at least prior to forming the plurality of capacitor electrodes having a plurality of openings formed there-through, forming of the retaining structure comprising enlarging the openings after their initial formation; and

incorporating the plurality of capacitor electrodes into a plurality of capacitors.