Patent Assignment
Reel/Frame 027396/0123
Assignment of Assignor's Interest
Recorded: 2011-12-16
Pages: 7
Assignor
MICRON
Executed: 2011-12-14
Assignee
NANYA
HWA-YA TECHNOLOGY PARK NO. 669, FUHSING 3 RD, KUEISHAN, TAOYUAN, TAIWAN
Covered Properties
(50)
Capacitor Compatible with High Dielectric Constant Materials Having Two Independent Insulative Layers and the Method for Forming Same
Patent:
5,392,189 →
Application:
08/104,524 →
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Patent:
5,381,302 →
Application:
08/104,525 →
Method for Forming Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer
Patent:
5,506,166 →
Application:
08/313,677 →
Method for Forming a Capacitor Compatible with High Dielectric Constant Materials Having Two Independent Insulative Layers
Patent:
6,066,528 →
Application:
08/314,117 →
Method for Forming a Storage Cell Capacitor Compatible with High Dielectric Constant Materials
Patent:
5,478,772 →
Application:
08/390,336 →
Semiconductor Chip Package
Patent:
5,677,566 →
Application:
08/436,522 →
Method for Forming a Storage Cell Capacitor Compatible with High Dielectric Constant Materials
Patent:
6,030,847 →
Application:
08/572,392 →
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Patent:
5,959,327 →
Application:
08/572,846 →
Reduced Pitch Laser Redundancy Fuse Bank Structure
Patent:
5,636,172 →
Application:
08/577,468 →
Reduced Pitch Laser Redundancy Fuse Bank Structure
Patent:
5,747,869 →
Application:
08/831,389 →
Semiconductor Chip Package
Patent:
6,232,213 →
Application:
08/910,500 →
Reduced Pitch Laser Redundancy Fuse Bank Structure
Patent:
5,905,295 →
Application:
09/031,938 →
Multichip Semiconductor Package
Reduced Pitch Laser Redundancy Fuse Bank Structure
Patent:
6,597,054 →
Application:
09/140,498 →
Redundancy Mapping in a Multichip Semiconductor Package
Patent:
6,246,615 →
Application:
09/219,808 →
Method for Forming a Capacitor Compatible with High Dielectric Constant Materials Having Two Independent Insulative Layers
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Method for Forming a Storage Cell Capacitor Compatible with High Dielectric Constant Materials
Patent:
6,791,131 →
Application:
09/489,954 →
Method of Making a multichip semicondicutor package
Patent:
6,228,548 →
Application:
09/502,538 →
Single Sided Adhesive Tape for Compound Diversion on Boc Substrates
Semiconductor Chip Package
Redundancy Mapping in a Multichip Semiconductor Package
Redundancy Mapping in a Multichip Semiconductor Package
Capacitor with High Dielectric Constant Materials and Method of Making
Capacitor with High Dielectric Constant Materials
Multichip Semiconductor Package
Memory Cell and Method for Forming the Same
Capacitor Compatible with High Dielectric Constant Materials Having Two Independent Insulative Layers and the Method for Forming Same
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Single Sided Adhesive Tape for Compound Diversion on Boc Substrates
Memory Cell and Method for Forming the Same
Capacitor with High Dielectric Constant Materials and Method of Making
Memory Cell and Method for Forming the Same
Method for Forming a Storage Cell Capacitor Compatible with High Dielectric Constant Materials
Pass Through via Technology for Use During the Manufacture of a Semiconductor Device
Method for Forming a Storage Cell Capacitor Compatible with High Dielectric Constant Materials
Memory Cell and Method for Forming the Same
Memory Cell and Method for Forming the Same
Memory Cell and Method for Forming the Same
Methods of Forming Pluralities of Capacitors
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Memory Cell and Method for Forming the Same
Memory Cell and Method for Forming the Same
Storage Cell Capacitor Compatible with High Dielectric Constant Materials
Method for Forming a Storage Cell Capacitor Compatible with High Dielectric Constant Materials
Method for Forming a Storage Cell Capacitor Compatible with High Dielectric Constant Materials
Pass Through via Technology for Use During the Manufacture of a Semiconductor Device
Memory Cell and Method for Forming the Same
Pass Through via Technology for Use During Teh Manufacture of a Semiconductor Device
Methods of Forming Pluralities of Capacitors
Related Assignments
(12)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 10, 1993
From: SANDHU, GURTEJ S.; FAZAN, PIERRE C.
To: MICRON SEMICONDUCTOR, INC.
Reel/Frame 006754/0135 →
Assignment of Assignor's Interest
Jan 24, 1994
From: FAZAN, PIERRE C.; SANDHU, CURTEJ S.
To: MICRON SEMICONDUCTOR, INC.
Reel/Frame 006877/0503 →
Assignment of Assignor's Interest
May 8, 1995
From: KING, JERROLD L.; BROOKS, JERRY M.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 007610/0940 →
Assignment of Assignor's Interest
Dec 22, 1995
From: PRALL, KIRK; STONE, TOD; ZAGAR, PAUL S.
To: MICRON TECHNOLOGIES,INC.
Reel/Frame 007826/0040 →
Merger
Dec 22, 1995
From: MICRON SEMICONDUCTOR, INC., AN ID CORP.
To: MICRON TECHNOLOGY, INC., A DE CORP.
Reel/Frame 007749/0870 →
Assignment of Assignor's Interest
May 31, 1996
From: FAZAN, PIERRE C.; MATHEWS, VIJU K.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 007970/0325 →
Assignment of Assignor's Interest
Feb 27, 1998
From: KING, JERROLD L.; BROOKS, JERRY M.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 009016/0027 →
Merger
Apr 27, 1998
From: MICRON SEMICONDUCTOR, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 009151/0307 →
Assignment of Assignor's Interest
Mar 29, 1999
From: KING, JERROLD L.; BROOKS, JERRY M.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 009868/0439 →
Assignment of Assignor's Interest
May 10, 2001
From: JAMES, STEPHEN L.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 011795/0825 →
Assignment of Assignor's Interest
Jul 8, 2008
From: MICRON SEMICONDUCTOR, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 021212/0114 →
Assignment of Assignor's Interest
Nov 17, 2011
From: MICRON
To: NANYA
Reel/Frame 027247/0742 →