Patent Assignment
Reel/Frame 021212/0114
Assignment of Assignor's Interest
Recorded: 2008-07-08
Pages: 10
Assignor
MICRON SEMICONDUCTOR, INC.
Executed: 1994-10-28
Assignee
MICRON TECHNOLOGY, INC.
8000 SO. FEDERAL WAY, BOISE, IDAHO, 83716-9632
Covered Properties
(6)
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Patent:
5,381,302 →
Application:
08/104,525 →
Method for Forming Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer
Patent:
5,506,166 →
Application:
08/313,677 →
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Patent:
5,959,327 →
Application:
08/572,846 →
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Capacitor Compatible with High Dielectric Constant Materials Having a Low Contact Resistance Layer and the Method for Forming Same
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 10, 1993
From: SANDHU, GURTEJ S.; FAZAN, PIERRE C.
To: MICRON SEMICONDUCTOR, INC.
Reel/Frame 006754/0135 →
Merger
Dec 22, 1995
From: MICRON SEMICONDUCTOR, INC., AN ID CORP.
To: MICRON TECHNOLOGY, INC., A DE CORP.
Reel/Frame 007749/0870 →
Assignment of Assignor's Interest
Dec 16, 2011
From: MICRON
To: NANYA
Reel/Frame 027396/0123 →