Method for chemical mechanical polishing a substrate

1. A method for chemical mechanical polishing of a substrate, comprising:

providing a substrate, wherein the substrate comprises silicon dioxide;

providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: water, 0.1 to 30 wt % abrasive having an average particle size of ≦100 nm; 0.005 to 0.5 wt % diquaternary cation according to formula (I):

wherein each X is independently selected from N and P;

wherein R 1 is a C 2 -C 6 alkyl group; and,

wherein R 2 , R 3 , R 4 , R 5 , R 6 and R 7 are each independently selected from a C 2 -C 6 alkyl group; and

0 to 0.1 wt % quaternary alkylammonium compound;

providing a chemical mechanical polishing pad;

creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.1 to 5 psi; and

dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;

wherein the chemical mechanical polishing composition has a pH of 2 to 6; and, wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min.

2. The method of claim 1 , wherein the chemical mechanical polishing composition is corrosion inhibitor free.

3. The method of claim 1 , wherein the abrasive is a colloidal silica; and wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 ml/min, and a nominal down force of 3 psi on a 200 mm polishing machine where the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

4. The method of claim 1 , wherein the substrate further comprises at least one of SiC, SiCN, Si 3 N 4 , SiCO and polysilicon.

5. The method of claim 1 , wherein the substrate further comprises Si 3 N 4 ; wherein the abrasive is a colloidal silica; wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 ml/min, and a nominal down force of 3 psi on a 200 mm polishing machine where the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

6. The method of claim 1 , wherein the substrate provided comprises silicon dioxide deposited on silicon nitride; wherein the chemical mechanical polishing composition provided comprises water; 1 to 5 wt % colloidal silica abrasive having an average particle size of 20 to 30 nm; 0.02 to 0.06 wt % diquaternary cation according to formula (I) and 0.005 to 0.055 wt % quaternary alkylammonium compound selected from tetraethyl ammonium hydroxide and tetrabutyl ammonium hydroxide; wherein the down force applied is 0.1 to 3 psi; wherein the chemical mechanical polishing composition provided has a pH of 3 to 4; wherein the silicon dioxide and silicon nitride are exposed to the chemical mechanical polishing composition; and, wherein the chemical mechanical polishing composition exhibits a silicon dioxide to silicon nitride selectivity of at least 5 to 1.

7. The method of claim 6 , wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 ml/min, and a nominal down force of 3 psi on a 200 mm polishing machine where the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

8. A method for chemical mechanical polishing of a substrate, comprising:

providing a substrate, wherein the substrate comprises silicon dioxide;

providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: water, 0.1 to 30 wt % abrasive having an average particle size of ≦100 nm; 0.005 to 0.5 wt % diquaternary cation according to formula (I):

wherein each X is a N;

wherein R 1 is a C 2 -C 6 alkyl group; and,

wherein R 2 , R 3 , R 4 , R 5 , R 6 and R 7 are each independently selected from a C 2 -C 6 alkyl group; and

0 to 0.1 wt % quaternary alkylammonium compound;

providing a chemical mechanical polishing pad;

creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.1 to 5 psi; and

dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;

wherein the chemical mechanical polishing composition has a pH of 2 to 6; and, wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min.

9. The method of claim 8 , wherein the chemical mechanical polishing composition is corrosion inhibitor free.

10. The method of claim 8 , wherein the abrasive is a colloidal silica; and wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 ml/min, and a nominal down force of 3 psi on a 200 mm polishing machine where the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

11. The method of claim 8 , wherein the substrate further comprises at least one of SiC, SiCN, Si 3 N 4 , SiCO and polysilicon.

12. The method of claim 8 , wherein the substrate further comprises Si 3 N 4 ; wherein the abrasive is a colloidal silica; wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 ml/min, and a nominal down force of 3 psi on a 200 mm polishing machine where the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

13. The method of claim 8 , wherein the substrate provided comprises silicon dioxide deposited on silicon nitride; wherein the chemical mechanical polishing composition provided comprises water; 1 to 5 wt % colloidal silica abrasive having an average particle size of 20 to 30 nm; 0.02 to 0.06 wt % diquaternary cation according to formula (I) and 0.005 to 0.055 wt % quaternary alkylammonium compound selected from tetraethyl ammonium hydroxide and tetrabutyl ammonium hydroxide; wherein the down force applied is 0.1 to 3 psi; wherein the chemical mechanical polishing composition provided has a pH of 3 to 4; wherein the silicon dioxide and silicon nitride are exposed to the chemical mechanical polishing composition; and, wherein the chemical mechanical polishing composition exhibits a silicon dioxide to silicon nitride selectivity of at least 5 to 1.

14. The method of claim 13 , wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 ml/min, and a nominal down force of 3 psi on a 200 mm polishing machine where the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.