Method for fabricating capacitor in semiconductor device

1. A method for fabricating a capacitor in a semiconductor device, comprising:

forming an insulation layer over a substrate;

forming a storage node contact plug passing through the insulation layer and coupled to the substrate;

recessing the storage node contact plug to a certain depth to obtain a sloped profile;

forming a barrier metal over the surface profile of the recessed storage node contact plug;

forming a sacrificial layer over the substrate structure;

etching the sacrificial layer to form an opening exposing the barrier metal;

forming a bottom electrode over the surface profile of the opening; and

removing the etched sacrificial layer.

2. The method of claim 1 , wherein the forming of the storage node contact plug comprises using polysilicon.

3. The method of claim 1 , wherein the forming of the barrier metal comprises using a titanium layer.

4. The method of claim 1 , further comprising, before the forming of the sacrificial layer, forming a conductive material layer over the barrier metal.

5. The method of claim 4 , wherein the conductive material layer comprises substantially the same material as the barrier metal or the storage node contact plug.

6. The method of claim 4 , further comprising, before the forming of the sacrificial layer, forming an etch stop layer over the substrate structure including the conductive material layer.

7. The method of claim 1 , wherein the forming of the bottom electrode comprises using a titanium nitride layer.

8. The method of claim 1 , wherein the forming of the insulation layer and the forming of the sacrificial layer comprise using an oxide-based layer.

9. The method of claim 8 , wherein the removing of the etched sacrificial layer comprises performing a dip out process.