Semiconductor device
View Patent ↗An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A device element 3 is formed on a front surface of a semiconductor substrate 4, and a sealing body 1 is attached to the semiconductor substrate 4 with an adhesive layer 6 being interposed therebetween. A main surface (a back surface) of the sealing body 1 which faces the semiconductor substrate 4 is curved inward, and there is a given space (a cavity 2 ) between the sealing body 1 and the semiconductor substrate 4. Since the back surface of the sealing body 1 is curved, the sealing body 1 is used as a planoconcave lens (a reverse direction) as well as a sealing member for the device element 3.
1. A semiconductor device comprising:
a semiconductor substrate comprising a device element formed on a front surface of the semiconductor substrate;
a sealing body having a first main surface and a second main surface and attached to the front surface of the semiconductor substrate; and
an adhesive layer attaching the sealing body to the semiconductor substrate,
wherein the first main surface facing the device element is curved inward so as to provide a cavity between the sealing body and the semiconductor substrate,
the first main surface is curved such that no flat plane exists in the curved first main surface, and
the second main surface is flat such that no curved portion exists in the second main surface above the device element.
2. The semiconductor device of claim 1 , wherein the device element comprises a light receiving element, and the sealing body seals the device element.
3. The semiconductor device of claim 1 , wherein the device element comprises a MEMS element.
4. The semiconductor device of claim 1 , wherein the device element is formed of a semiconductor in the semiconductor substrate so as to be part of the semiconductor substrate.
5. The semiconductor device of claim 1 , wherein the cavity is a vacuum or filled with an inert gas.