Semiconductor device and manufacturing method thereof
View Patent ↗This invention is directed to offer a semiconductor device in which a cavity space is easily provided in a specific region when a supporting member is bonded to a semiconductor substrate through an adhesive layer, and its manufacturing method. A resist layer is applied to an entire top surface of the semiconductor substrate 2 , and exposure to transfer a pattern is performed. By subsequent development and selective removal of the resist layer, the resist layer is formed into a shape of a plurality of columnar structures 4 . Then, an adhesive material made of an epoxy resin or the like is applied to the entire top surface of the semiconductor substrate 2 . The adhesive material is gathered around the columnar structures 4 by itself to form an adhesive layer 5 . Therefore, in contrast, the adhesive layer 5 does not deposit in a region where the cavity is to be formed. Then, the supporting member 6 is bonded through the columnar structures 4 and the adhesive layer 5 . By bonding the supporting member 6 , there is formed the cavity 7 surrounded with the semiconductor substrate 2 , the columnar structures 3 and the supporting member 6.
1. A semiconductor device comprising:
a semiconductor substrate;
a plurality of non-conductive columnar structures formed on the semiconductor substrate;
a supporting member bonded to the semiconductor substrate;
solid adhesive layer filling a space between the columnar structures and bonding the supporting member to the semiconductor substrate; and
a device component sealed in a cavity formed by the semiconductor substrate, the columnar structures, the adhesive layer and the supporting member.
2. The semiconductor device of claim 1 , wherein a height of at least one of the plurality of columnar structures is smaller than a distance between the semiconductor substrate and the supporting member.
3. The semiconductor device of claim 1 further comprising an enclosure structure formed on the semiconductor substrate so as to surround the device component.
4. The semiconductor device of claim 3 , wherein each of the columnar structures and the enclosure structure comprises an organic film.
5. The semiconductor device of claim 1 , wherein the columnar structures are formed at a substantially uniform density.
6. The semiconductor device of claim 1 , wherein a density of the columnar structures formed at a location distant from the device component is smaller than a density of the columnar structures formed at a location close to the device component.
7. The semiconductor device of claim 1 , wherein the columnar structures are placed from each other at a distance that induces a capillary phenomenon of a fluid.